TaeKyun Kim

Corrosive ionic defects in perovskite films degrade perovskite solar cells (PSCs) and long-term stable PSCs are realized by neutralizing the defects.

The importance of interfacial engineering as a new strategy for improving the power conversion efficiencies (PCEs) of planar-heterojunction (PHJ) perovskite solar cells is highlighted by incorporating sol–gel ZnO modified with PCBM.

Highly efficient P-I-N type perovskite/bulk-heterojunction (BHJ) integrated solar cells (ISCs) with enhanced fill factor (FF) (≈80%) and high near-infrared harvesting (>30%) are demonstrated by optimizing the BHJ morphology with a novel n-type polymer, N2200, and a new solvent-processing additive. This work proves the feasibility of highly efficient ISCs with panchromatic absorption as a new photovoltaic architecture and provides important design rules for optimizing ISCs.

A junctionless-accumulation-mode (JAM) p-channel MOSFET is successfully implemented based on a junction-isolated bulk FinFET for the first time. The JAM devices with a fin width of 16 nm show outstanding transfer characteristics: 1) subthreshold swing (SS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> ) = 68 mV/dec; 2) drain-induced-barrier-lowering is 9 mV/V; and 3) I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http:

With the recent increasing interest in big data and artificial intelligence, there is an emerging demand for high-performance memory system with large density and high data-bandwidth. However, conventional DIMM-type memory has difficulty achieving more than 50GB/s due to its limited pin count and signal integrity issues. High-bandwidth memory (HBM) DRAM, with TSV technology and wide IOs, is a prominent solution to this problem, but it still has many limitations: including power consumption and r

In this letter, we investigated the junctionless accumulation-mode (JAM) bulk FinFETs with high-κ gate spacers showing enhanced device performance in SS, DIBL, and ON/OFF current ratio. We found that origin of the ON-state current enhancement was reduction of the initial energy barrier between the source and channel, and reason for the OFF-state current reduction was LG extension caused by the fringing field through high-κ gate spacers. The OFF-state leakage current decreased by over one order o

There is enormous demand for high-bandwidth DRAM: in application such as HPC, graphics, high-end server and artificial intelligence. HBM DRAM was developed [1] using the advances in package technology: TSV, microbump and silicon-interposer. Owing to these advances, HBM has a much higher bandwidth, at a lower pin speed rate, than conventional DRAM. However, the 3D-stack structure causes TSV interface and PDN problems: TSV connection failure and 3D-accumulation of IR drop, which increases the tota

Patellar dislocation is an uncommon source of anterior knee pain, but it can cause significant morbidity in young, active patients who are particularly prone to recurrent instability. Most first-time dislocations are successfully treated with initial brace immobilization followed by rehabilitation. Surgical stabilization of recurrent instability has a high success rate and is usually required if nonoperative measures fail. By identifying the problem early and prescribing appropriate treatment, p

In bin-picking scenarios, multiple instances of an object of interest are\nstacked in a pile randomly, and hence, the instances are inherently subjected\nto the challenges: severe occlusion, clutter, and similar-looking distractors.\nMost existing methods are, however, for single isolated object instances, while\nsome recent methods tackle crowd scenarios as post-refinement which accounts\nmultiple object relations. In this paper, we address recovering 6D poses of\nmultiple instances in bin-pick

Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate, Jeong, Woo Jin, Kim, Tae Kyun, Moon, Jung Min, Park, Min Gyu, Yoon, Young Gwang, Hwang, Byeong Woon, Choi, Woo Young, Shin, Mincheol, Lee, Seok-Hee

Abstract A yarn‐based capacitive torsion sensor was produced using a simple electrospinning coating method. It was expected that nonwoven nanofiber mats, as a coating layer, would exhibit excellent performance owing to their high surface area and porous three‐dimensional nonwoven structure, which is more deformable than that of films. The electrospinning process was investigated by image analysis to generate a suitable structure of the nanofiber coating layer. The thickness of the layer was cont

A series of thermotropic liquid crystalline poly(ester-imide)s was synthesized by melt polymerization of diacetoxynaphthalene acid and n-(ω-carboxyalkylene) trimellitic imides. All polymers with 2,6 substituent positions (n-2,6 PEIM) on the napthalene ring exhibit liquid crystalline phases, whereas polymers with 2,7 substituent positions (n-2,7 PEIM) do not. This result suggests that the kink structure of n-2,7 PEIMS would hinder the formation of liquid crystalline polymer. The copoly(ester-imid