Honggi Min

Starting from a microscopic tight-binding model and using second-order perturbation theory, we derive explicit expressions for the intrinsic and Rashba spin-orbit interaction induced gaps in the Dirac-like low-energy band structure of an isolated graphene sheet. The Rashba interaction parameter is first order in the atomic carbon spin-orbit coupling strength $\ensuremath{\xi}$ and first order in the external electric field $E$ perpendicular to the graphene plane, whereas the intrinsic spin-orbit

We study the gate-voltage induced gap that occurs in graphene bilayers using ab initio density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the ab initio calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.

Because graphene is an atomically two-dimensional gapless semiconductor with nearly identical conduction and valence bands, graphene-based bilayers are attractive candidates for high-temperature electron-hole pair condensation. We present estimates which suggest that the Kosterlitz-Thouless temperatures of these two-dimensional counterflow superfluids can approach room temperature.

We show that the low-energy electronic structure of arbitrarily stacked graphene multilayers with nearest-neighbor interlayer tunneling consists of chiral pseudospin doublets. Although the number of doublets in an $N$-layer system depends on the stacking sequence, the pseudospin chirality sum is always $N$. $N$-layer stacks have $N$ distinct Landau levels at $E=0$ for each spin and valley, and quantized Hall conductivity ${\ensuremath{\sigma}}_{xy}=\ifmmode\pm\else\textpm\fi{}(4{e}^{2}∕h)(N∕2+n)

We predict that neutral graphene bilayers are pseudospin magnets in which the charge density contribution from each valley and spin spontaneously shifts to one of the two layers. The band structure of this system is characterized by a momentum-space vortex, which is responsible for unusual competition between band and kinetic energies, leading to symmetry breaking in the vortex core. We discuss the possibility of realizing a pseudospin version of ferromagnetic metal spintronics in graphene bilay

We study the electronic structure of multilayer graphene using a $\pi$-orbital continuum model with nearest-neighbor intralayer and interlayer tunneling. Using degenerate state perturbation theory, we show that the low-energy electronic structure of arbitrarily stacked graphene multilayers consists of chiral pseudospin doublets with a conserved chirality sum.

We show that the origin of the universal optical conductivity in a normal N-layer graphene multilayer is an emergent chiral symmetry which guarantees that sigma(omega) = Nsigma_{uni} in both low and high-frequency limits. [sigma_{uni} = (pi/2)e;{2}/h]. We use this physics to relate intermediate frequency conductivity trends to qualitative characteristics of the multilayer stacking sequence.

Experimental measurements of domain wall propagation are typically interpreted by comparison to reduced models that ignore both the effects of disorder and the internal dynamics of the domain wall structure. Using micromagnetic simulations, we study vortex wall propagation in magnetic nanowires induced by fields or currents in the presence of disorder. We show that the disorder leads to increases and decreases in the domain wall velocity depending on the conditions. These results can be understo

We develop a theory for the temperature and density dependence of phonon-limited resistivity $\ensuremath{\rho}(T)$ in bilayer and multilayer graphene and compare with the corresponding monolayer result. For the unscreened case, we find $\ensuremath{\rho}\ensuremath{\approx}CT$ with $C\ensuremath{\propto}{v}_{\mathrm{F}}^{\ensuremath{-}2}$ in the high-temperature limit, and $\ensuremath{\rho}\ensuremath{\approx}A{T}^{4}$ with $A\ensuremath{\propto}{v}_{\mathrm{F}}^{\ensuremath{-}2}{k}_{\mathrm{F

We calculate the static polarizability of multilayer graphene and study the effect of stacking arrangement, carrier density, and on-site energy difference on graphene screening properties. At low densities, the energy spectrum of multilayer graphene is described by a set of chiral two-dimensional electron systems, and the associated chiral nature determines the screening properties of multilayer graphene, showing very different behavior depending on whether the chirality index is even or odd. As

We discuss the effect of disorder on the band gap measured in bilayer graphene in optical and transport experiments. By calculating the optical conductivity and density of states using a microscopic model in the presence of disorder, we demonstrate that the gap associated with transport experiments is smaller than that associated with optical experiments. Intrinsic bilayer graphene has an optical conductivity in which the energy of the peaks associated with the interband transition are very robu

We calculate the conductivity of arbitrarily stacked multilayer graphene sheets within a relaxation time approximation, considering both short-range and long-range impurities. We theoretically investigate the feasibility of identifying the stacking order of these multilayers using transport measurements. For relatively clean samples, the conductivities of the various stacking configurations depend on the carrier density as a power law for over two decades. This dependence arises from a low-densi

A vortex gyrating in a magnetic disk has two regimes of motion in the presence of disorder. At large gyration amplitudes, the vortex core moves quasi-freely through the disorder potential. As the amplitude decreases, the core can become pinned at a particular point in the potential and precess with a significantly increased frequency. In the pinned regime, the amplitude of the gyration decreases more rapidly than it does at larger precession amplitudes in the quasi-free regime. In part, this dec

We investigate temperature-dependent transport properties of two-dimensional $p$-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of $p$-GaAs in the temperature range $10\phantom{\rule{4.pt}{0ex}}\text{K}<T<100$ K, we estimate the value of the appropriate deformation potential for hole-phonon coupling. Due to the interplay between hole-phonon and hole-impurity scattering the calculated temperature-dependent resistiv