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Jangyeon Kwon

Yonsei University · 工学

研究室紹介

Professor Jangyeon Kwon's research lab specializes in advanced 2D materials and oxide semiconductors for next-generation electronic and optoelectronic devices. The lab focuses on developing high-performance thin film transistors, tactile sensors, and self-powered microfluidic systems, with an emphasis on material integration, device reliability, and novel device architectures. Key research directions include the electrical and stability behavior of Hf–In–Zn–O (HIZO) and other oxide semiconductors under stress conditions, the design of bio-inspired tactile sensors with high sensitivity, and the development of energy-autonomous sensing systems using triboelectric and resistive transduction. The lab also explores fundamental mechanisms in nanoscale materials, such as agglomeration dynamics in metal films and carrier trapping in dielectrics.

oxide semiconductors2D materialstactile sensorsdevice reliabilitytriboelectric sensors

Research Overview

Papers
188
Total Citations
6,146
Papers (5y)
36
Primary Field
工学

Research Output Trend

Figures are computed from collected data and may differ slightly.

Publications per year (5y)
36total
2022
2023
2024
2025
2026
Citations per year (5y)
392total
20222023202420252026

Selected Papers

15
1
Article|280 citations·2011
Review paper: Transparent amorphous oxide semiconductor thin film transistor
Jang‐Yeon Kwon, Do-Joong Lee, Ki-Bum Kim
SJR Q2Electronic Materials Letters
Electrical and Electronic EngineeringEngineering
2
Article|222 citations·2011
Transparent Amorphous Oxide Semiconductor Thin Film Transistor
권장연, 이도중, 김기범

Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last few years,especially for large area electronic applications, such as high resolution active matrix liquid crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs), because of their high electron mobility and spatial uniform property. This paper reviews and summarizes recent emerging reports that include potential applications, oxide semiconductor materials, and the impact of t

3
Article|215 citations·2003
Comparison of the agglomeration behavior of Au and Cu films sputter deposited on silicon dioxide
Jang‐Yeon Kwon, Tae‐Sik Yoon, Ki-Bum Kim, Seok-Hong Min
SJR Q2Journal of Applied Physics

The agglomeration behavior of Cu and Au films each with a thickness of 5 and 50 nm, deposited on thermally grown SiO2 by dc magnetron sputtering, was investigated with scanning electron microscopy. The size of Cu islands formed by agglomeration increased with increasing annealing temperature. Also, the agglomeration of Cu films seem to follow the grain boundary grooving process. On the other hand, Au islands have an identical size at different annealing temperatures. Au films were observed to ag

Atmospheric ScienceEarth and Planetary Sciences
4
Article|184 citations·2014
Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor
S. Parthiban, Jang‐Yeon Kwon
SJR Q2Journal of materials research/Pratt's guide to venture capital sources
Electrical and Electronic EngineeringEngineering
5
Article|127 citations·2018
A Highly Sensitive Tactile Sensor Using a Pyramid‐Plug Structure for Detecting Pressure, Shear Force, and Torsion
Daehwan Choi, Sukjin Jang, Joo Sung Kim, Hyung Jun Kim, Do Hwan Kim, Jang‐Yeon Kwon
SJR Q1Advanced Materials Technologies

Abstract Sensors that detect and discriminate external mechanical forces are a principal component in the development of electronic tactile systems that can mimic the multifunctional properties of human skin. This study demonstrates a pyramid‐plug structure for highly sensitive tactile sensors that enables them to detect pressure, shear force, and torsion. The device is composed of pyramid‐patterned ionic gel inspired by neural mechanoreceptors and engraved electrodes. Based on a pyramid‐plug st

Biomedical EngineeringEngineering
6
Article|110 citations·2010
The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor
Jang‐Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Kwang-Hee Lee, Joon Seok Park, Tae Sang Kim, Jin‐Seong Park, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, Sangyoon Lee
SJR Q1Applied Physics Letters

This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf–In–Zn–O (HIZO) transistor. The HfOx and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propos

Electrical and Electronic EngineeringEngineering
7
Article|73 citations·2018
A self-powered triboelectric microfluidic system for liquid sensing
Wook Kim, Daehwan Choi, Daehwan Choi, Jang‐Yeon Kwon, Dukhyun Choi, Dukhyun Choi
SJR Q1Journal of Materials Chemistry A

Self-powered triboelectric microfluidic system was developed for the simple and rapid liquid sensing with multiple methods such as triboelectric signal and resistance measurement.

Biomedical EngineeringEngineering
8
Article|70 citations·2015
A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors
Ah-Jin Cho, Kee Chan Park, Jang‐Yeon Kwon
SJR Q1Nanoscale Research LettersOA

For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a

Materials ChemistryMaterials Science
9
Article|66 citations·2020
Proton-enabled activation of peptide materials for biological bimodal memory
Min‐Kyu Song, Seok Daniel Namgung, Daehwan Choi, Hyeohn Kim, Hongmin Seo, Misong Ju, Yoon Ho Lee, Taehoon Sung, Yoon‐Sik Lee, Ki Tae Nam, Jang‐Yeon Kwon
SJR Q1Nature CommunicationsOA

The process of memory and learning in biological systems is multimodal, as several kinds of input signals cooperatively determine the weight of information transfer and storage. This study describes a peptide-based platform of materials and devices that can control the coupled conduction of protons and electrons and thus create distinct regions of synapse-like performance depending on the proton activity. We utilized tyrosine-rich peptide-based films and generalized our principles by demonstrati

Electrical and Electronic EngineeringEngineering
10
Article|65 citations·2018
Two-Dimensional WSe2/MoS2 p–n Heterojunction-Based Transparent Photovoltaic Cell and Its Performance Enhancement by Fluoropolymer Passivation
Ah-Jin Cho, Min‐Kyu Song, Dong‐Won Kang, Jang‐Yeon Kwon
SJR Q1ACS Applied Materials & Interfaces

As a means to overcome the limitation of installation space and to promote the utilization of the solar cell in various applications, a transparent thin-film solar cell has been studied by many researchers. To achieve a transparent solar cell, the choice of materials which are transparent enough and showing the photovoltaic property at the same time is the key. Here, we suggest a two-dimensional (2D) p-n heterojunction of WSe<sub>2</sub>/MoS<sub>2</sub> and an indium tin oxide electrode to fabri

Materials ChemistryMaterials Science
11
Article|60 citations·2010
The Impact of Device Configuration on the Photon-Enhanced Negative Bias Thermal Instability of GaInZnO Thin Film Transistors
Jang‐Yeon Kwon, Kyoung Seok Son, Ji Sim Jung, Kwang-Hee Lee, Joon Seok Park, Tae Sang Kim, Kwang Hwan Ji, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, Sangyun Lee
Electrochemical and Solid-State Letters

We investigated the effect of device configuration on the light-induced negative bias thermal instability of gallium indium zinc oxide transistors. The of back-channel-etch (BCE)-type transistors shifted by −3.5 V, and the subthreshold gate swing (SS) increased from 0.88 to 1.38 V/decade after negative bias illumination temperature stress for 3 h. However, etch-stopper-type devices exhibited small shifts of −0.8 V without degradation in the SS value. It is believed that the inferior instability

Electrical and Electronic EngineeringEngineering
12
Article|59 citations·2019
Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar Cells
Ah-Jin Cho, Jang‐Yeon Kwon
SJR Q1ACS Applied Materials & Interfaces

Two-dimensional (2D) semiconductors can be promising active materials for solar cells due to their advantageous electrical and optical properties, in addition to their ability to form high-quality van der Waals (vdW) heterojunctions using a simple process. Furthermore, the atomically thin nature of these 2D materials allows them to form lightweight and transparent thin-film solar cells. However, strategies appropriate for optimizing their properties have not been extensively studied yet. In this

Materials ChemistryMaterials Science
13
Article|57 citations·2015
Influence of post-annealing on the off current of MoS2 field-effect transistors
Seok Daniel Namgung, Suk Yang, Kyung Park, Ah-Jin Cho, Hojoong Kim, Jang‐Yeon Kwon
SJR Q1Nanoscale Research LettersOA

Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS2 is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the MoS2 field-effect transistor (FET) as a function of post-annealing temperature. The results indicate that

Materials ChemistryMaterials Science
14
Article|48 citations·2018
A Self‐Powered Smart Roller‐Bearing Based on a Triboelectric Nanogenerator for Measurement of Rotation Movement
Daehwan Choi, Taehoon Sung, Jang‐Yeon Kwon
SJR Q1Advanced Materials Technologies

Abstract Triboelectric nanogenerator technology is one of the most promising technologies with great potential for applications in self‐powered electronics and sensing systems. Herein a simply fabricated, cost‐effective, triboelectric sensor with a roller‐bearing structure which is composed of rollers and electrode is presented. Based on the triboelectric effect, this smart bearing generates the output electrical signals in response to rotation movement or displacement of an object mounted with

Biomedical EngineeringEngineering
15
Article|44 citations·2014
Electrical stability of multilayer MoS2 field-effect transistor under negative bias stress at various temperatures
Suk Yang, Solah Park, Sukjin Jang, Hojoong Kim, Jang‐Yeon Kwon
SJR Q2physica status solidi (RRL) - Rapid Research Letters

The electrical stability of molybdenum disulfide (MoS2) transistors is crucial for their use in various applications. However, it is tricky to evaluate the inherent stability of MoS2 transistors because it is highly dependent on environmental conditions during measurement such as humidity, light, and electrical factors. We studied the threshold voltage instability under negative bias stress at a variety of temperatures in a vacuum and in the dark to eliminate any environmental effects. In partic

Materials ChemistryMaterials Science

Research Areas

Electrical and Electronic EngineeringMaterials ChemistryBiomedical EngineeringElectronic, Optical and Magnetic MaterialsPolymers and PlasticsBioengineering

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