Kibum Kang

Nanowires can serve as three-dimensional platforms at the nanometer scale for highly efficient chemical energy storage and conversion vehicles, such as fuel cells and secondary batteries. Here we report a coin-type Si nanowire (NW) half-cell Li-ion battery showing the Li capacity of approximately 4000 mAh/g, which nearly approaches the theoretical limit of 4200 mAh/g, with very high Coulombic efficiency of up to 98%. Concomitantly, we provide direct evidence of reversible phase transitions in th

Tactile pressure sensors as flexible bioelectronic devices have been regarded as the key component for recently emerging applications in electronic skins, health-monitoring devices, or human-machine interfaces. However, their narrow range of sensible pressure and their difficulty in forming high integrations represent major limitations for various potential applications. Herein, we report fully integrated, active-matrix arrays of pressure-sensitive MoS₂ transistors with mechanolumines

Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2

Cu-Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu-catalytic growth. The low-temperature growth is accessible at as low as 200 °C on polymer substrates, and the epitaxial growth is also possible on single-crystalline substrates with the narrow diameter distribution of 7 nm, directly templated from those of Cu catalysts. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are p

Abstract Transition metal dichalcogenides (TMDs) have attracted significant interest as gas‐sensing materials due to their unique crystal structure and surface. However, there are still issues when it comes to expanding the types of sensing gases for the TMD gas sensors. To extend gas‐sensing selectivity for the TMD gas sensors in this study, a monolayer (ML) 2D metal–organic framework (MOF) is introduced on top of the PtSe 2 gas sensor, thereby tuning the major sensing analyte of PtSe 2 from NO

We report amorphous-Si nanowire shell anodes, supported by NiSixnanowire cores, by catalyst-free two-step SiH4 chemical vapor deposition, where the metallic core acts as a mechanical supporter and a kinetically unlimited charge supplier. We have achieved highly reversible capacitance of over 3000 mAh g−1 even at a 2C rate, with stable cyclic retention which stems from the altered electrochemical reactions with relatively small volume expansion routes by a kinetic effect.

Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This i

We report a controllably reproducible and spontaneous growth of single-crystalline NiSix nanowires using NiOx/Ni seed layers during SiH4 chemical vapor deposition (CVD). We provide evidence that upon the reactions of SiH4 (vapor)-Ni seed layers (solid), the presence of the NiOx overlayer on Ni seed layers plays the key role to promote the spontaneous one-dimensional growth of NiSix single crystals without employing catalytic nanocrystals. Specifically, the spontaneous nanowire formation on the N

Neuromorphic computing is of great interest among researchers interested in overcoming the von Neumann computing bottleneck. A synaptic device, one of the key components to realize a neuromorphic system, has a weight that indicates the strength of the connection between two neurons, and updating this weight must have linear and symmetric characteristics. Especially, a transistor-type device has a gate terminal, separating the processes of reading and updating the conductivity, used as a synaptic

Abstract Advances in large‐area and high‐quality 2D transition metal dichalcogenides (TMDCs) growth are essential for semiconductor applications. Here, the gas‐phase alkali metal‐assisted metal‐organic chemical vapor deposition (GAA‐MOCVD) of 2D TMDCs is reported. It is determined that sodium propionate (SP) is an ideal gas‐phase alkali‐metal additive for nucleation control in the MOCVD of 2D TMDCs. The grain size of MoS 2 in the GAA‐MOCVD process is larger than that in the conventional MOCVD pr

Abstract A high‐speed and broadband 5 × 5 photodetector array based on MoS 2 /In 0.53 Ga 0.47 As heterojunction is successfully demonstrated to take full advantage of the type‐II band‐aligned multilayer MoS 2 /In 0.53 Ga 0.47 As. The fabricated devices exhibit good uniformity in the Raman spectrum and clear rectifying characteristics. The fabricated MoS 2 /In 0.53 Ga 0.47 As photodetectors show good optical performances at a broad wavelength range showing high responsivities corresponding to the

Abstract Van der Waals (vdW) heterostructures have drawn much interest over the last decade owing to their absence of dangling bonds and their intriguing low‐dimensional properties. The emergence of 2D materials has enabled the achievement of significant progress in both the discovery of physical phenomena and the realization of superior devices. In this work, the group IV metal chalcogenide 2D‐layered Ge 4 Se 9 is introduced as a new selection of insulating vdW material. 2D‐layered Ge 4 Se 9 is

Abstract The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In