Kisoo Kim
Kyung Hee University · 工学
研究室紹介
Professor Kisoo Kim's research lab specializes in advanced semiconductor materials and optoelectronic sensing technologies, with a strong focus on epitaxial growth of III-V semiconductors such as GaN and GaAs on foreign substrates like sapphire and silicon. The lab investigates strain engineering, defect control, and optical properties in heteroepitaxial films to enhance material quality and device performance. A key research direction involves developing fiber optic and MRI-based thermometry techniques for real-time, motion-robust temperature monitoring in biomedical applications, particularly in hyperthermia cancer therapy. The lab also explores nanoscale characterization and modeling of stress and carrier dynamics in semiconductor heterostructures for next-generation optoelectronic and thermal sensing devices.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
15A model was developed for embedded intrinsic and extrinsic Fabry-Perot fiber optic sensors. This model relates the strains and the temperature changes in the material surrounding the sensor to the reflected light intensity. The model consists of three parts. Submodel I relates the temperature and the strains in the material to the temperature and the strains inside the sensor. Submodel 2 relates the temperature and the strains inside the sensor to the change in sensor length and to the changes i
We studied the effects of the growth rate of a GaN buffer layer grown on a GaN epilayer. It was found that this growth rate plays a key role in improving the quality of the GaN film on a sapphire substrate and an optimum growth rate exists that yields the best crystal quality. A GaN film grown on a buffer layer with the optimum growth rate of 18.3 nm/min has an electron Hall mobility of 539 cm2/V s and a dislocation density of approximately 2×108 cm−2. These improvements of GaN film qualities ar
Proton resonance frequency shift (PRFS) MR thermometry is the most common method used in clinical thermal treatments because of its fast acquisition and high sensitivity to temperature. However, motion is the biggest obstacle in PRFS MR thermometry for monitoring thermal treatment in moving organs. This challenge arises because of the introduction of phase errors into the PRFS calculation through multiple methods, such as image misregistration, susceptibility changes in the magnetic field, and i
Heteroepitaxial GaAs layers were grown on Si (001) substrates by metalorganic chemical vapor deposition. The tetragonal distortion induced by the lattice and the thermal expansion coefficient mismatches gives substantial effects on the acceptor energy level as well as the valence band structure. The biaxial tensile strain in GaAs layers is investigated using low-temperature photoluminescence. The origins of intrinsic exciton lines and carbon-related extrinsic lines observed in the photoluminesce
BACKGROUND: Capacitive radiofrequency (RF) hyperthermia suffers from excessive temperature rise near the electrodes and poorly localized heat transfer to the deep-seated tumor region even though it is known to have potential to cure ill-conditioned tumors. To better localize heat transfer to the deep-seated target region in which electrical conductivity is elevated by nanoparticle mediation, two-channel capacitive RF heating has been tried on a phantom. METHODS: We made a tissue-mimicking phanto