Sangwoo Lim
Yonsei University · 工学
研究室紹介
Professor Sangwoo Lim's research lab specializes in the development and characterization of advanced functional materials for energy and electronic applications. Key research directions include the synthesis and optimization of ZnO-based nanostructures—such as nanorods and nanowires—for use in dye-sensitized solar cells and other optoelectronic devices, as well as the fabrication of low-dielectric-constant films for next-generation integrated circuits. The lab focuses on understanding growth mechanisms, surface engineering, and material properties at the nanoscale to enhance device performance.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
15To investigate the effect of seed layer on the growth of ZnO nanorods during hydrothermal synthesis, different types of sputter-deposited ZnO films were used. The changes in growth rate, diameter, density, and surface area of highly oriented ZnO nanorods on each seed layer were examined. The growth rate of ZnO nanorods has a strong relationship with the intensity of (0001) orientation. The density of nanorods per unit area is larger if the diameter of the nanorods is smaller. The total surface a
A thin ZnS shell was formed on ZnO nanowires using ZnSO 4 and thiourea in an NH 4 OH (ZTA) precursor solution, and its effect on the performance of a dye-sensitized solar cell (DSSC) was investigated. As compared to hydrothermal and successive ionic layer adsorption and reaction methods, it was observed that the ZnS shell was effectively synthesized on the ZnO nanowires using the ZTA solution. ZnO nanowires with a ZnS shell had lower absorption intensities over the entire wavelength range compar
Use of F‐doped silicon dioxide film as a low dielectric constant intermetal film for ultralarge scale integrated circuits (ULSI) is useful from the viewpoint of product cost and compatibility with present processing technologies. By adding to plasma‐enhanced chemical vapor deposition, we obtained F‐doped films with a dielectric constant as low as 2.6. The mechanism behind this decrease was investigated by estimating the dielectric constants due to the polarization components using capacitance‐vo