Byong‐Guk Park
KAIST Department of Materials Science and Engineering · 물리·천문학
Byong-Guk Park 교수의 연구실은 반도체 스핀트로닉스와 스핀 오르빗 토크 기반 신소재 장치의 핵심 기술을 연구하고 있습니다. 주요 연구 방향은 스핀홀 효과를 활용한 전류 없는 스핀 트랜지스터, 펄스형 스핀 오르빗 토크를 통한 고속 자기장 제어, 그리고 스핀 테르모파일을 활용한 열전기 에너지 수확 기술입니다. 특히, 펄스형 전류로도 효율적인 자기화 스위칭이 가능한 반도체 기반 스핀트로닉스 소자 설계에 초점을 맞추고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor. The device uses diffusive transport and operates without electrical current in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor cha
Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin-orbit torque (SOT), which originates from the spin-orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in-plane current. SOT spearheads novel spintronic applications including high-speed magnetic memo
Spin–orbit torque facilitates efficient magnetisation switching via an in-plane current in perpendicularly magnetised heavy-metal/ferromagnet heterostructures. The efficiency of spin–orbit-torque-induced switching is determined by the charge-to-spin conversion arising from either bulk or interfacial spin–orbit interactions or both. Here, we demonstrate that the spin–orbit torque and the resultant switching efficiency in Pt/CoFeB systems are significantly enhanced by an interfacial modification i
Abstract Spin–orbit torques (SOTs) in ferromagnet (FM)/Ta/CoFeB trilayers are investigated as a function of Ta thickness. When the Ta is thinner than 1.5 nm, the sign of the SOT exerting on the top perpendicularly magnetized CoFeB depends on the bottom FM layer; it is positive for NiFe and negative for CoFeB. As the Ta thickness increases, the sign becomes negative irrespective of the bottom FM, indicating that SOTs are dominated by Ta, which has a negative spin Hall angle. SOT‐induced switching
The thermoelectric effect in various magnetic systems, in which electric voltage is generated by a spin current, has attracted much interest owing to its potential applications in energy harvesting, but its power generation capability has to be improved further for actual applications. In this study, the first instance of the formation of a spin thermopile via a simplified and straightforward method which utilizes two distinct characteristics of antiferromagnetic IrMn is reported: the inverse sp
Publisher: The Japan Society of Applied Physics