Chandan Biswas 교수

Abstract Advances in semiconductor device during last few decades enable us to improve the electronic device performance by minimizing the device dimension. However, further development of these systems encounters scientific and technological limits and forces us to explore better alternatives. Low‐dimensional carbon allotropes such as carbon nanotube and graphene exhibit superior electronic, optoelectronic, and mechanical properties compared to the conventional semiconductors. This Feature Arti

Persistent photoconductance, a prolonged light-induced conducting behavior that lasts several hundred seconds, has been observed in semiconductors. Here we report persistent negative photoconductance and consecutive prominent persistent positive photoconductance in graphene. Unusually large yields of negative PC (34%) and positive PC (1652%) and remarkably long negative transient response time (several hours) were observed. Such high yields were reduced in multilayer graphene and were quenched u

Semiconductors with higher carrier mobility and carrier density are required to fabricate a p-n junction diode for high-speed device operation and high-frequency signal processing. Here, we use a chemically doped semiconducting single-walled carbon nanotube (SWCNT) random network for a field effect transistor (FET) and demonstrate a rectifier operated at a wide range of frequencies by fabricating a p-n junction diode. The p-n diode was fabricated by using a pristine p-type SWCNT-FET where half w

An alternative to charge-based electronics identifies the spin degree of freedom for information communication and processing. The long spin-diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of the graphene spin valve (SV) has inspired spin devices in graphene including spin field-effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development o

Unusually high exciton binding energies (BEs), as much as ∼1 eV in monolayer transition-metal dichalcogenides, provide opportunities for exploring exotic and stable excitonic many-body effects. These include many-body neutral excitons, trions, biexcitons, and defect-induced excitons at room temperature, rarely realized in bulk materials. Nevertheless, the defect-induced trions correlated with charge screening have never been observed, and the corresponding BEs remain unknown. Here we report defe

A traditional transparent conducting film (TCF) such as indium tin oxide (ITO) exhibits poor mechanical flexibility and inconsistent transmittance throughout the UV-VIS-NIR spectrum. Recent TCFs like graphene films exhibit high sheet resistance (R_s) due to defect induced carrier scattering. Here we show a unique hybrid chemical doping method that results in high transmittance uniformity in a layered graphene-polymer nanocomposite with suppressed defect-induced carrier scattering. This

Abstract Enhanced carrier–carrier interactions in hybrid nanostructures exhibit exceptional electronic and optoelectronic properties. Carbon nanotubes demonstrate excellent switching behavior with high on/off ratio and high mobility but do not show photoresponse in the visible range, whereas quantum dots (QDs) shows excellent optical response in various optical ranges which can be tuned with diameter. Here, a simple and effective way to develop hybrid phototransistors with extraordinary optoelec

Nanodispersion of single-walled carbon nanotubes (SWCNTs) have been systematically investigated with the use of sodium dodecyl sulfate (SDS) and poly(vinylpyrrolidone) (PVP) surfactant in deionized water. A high concentration of nanodispersed SWCNTs up to 0.08 mg/mL was achieved with introduction of an additional dispersant of PVP by optimizing surfactant concentration, sonication time, and centrifugation speed, which was crucial to obtaining a high concentration of SWCNTs in the supernatant sol

Photovoltaic device performance of graphene/n-Si Schottky diodes is largely affected by inhomogeneous oxide formation at the interface that suppresses the tunneling current of injected and photoexcited charges. The accumulated trap charges at low current induce charge recombination at the interface and degrade the ideality factor of the diode and the fill factor (FF) of the solar cell. This consequently gives rise to a nonlinear current-voltage ( I- V) feature in solar cells, commonly known as a

Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by efficient modulation of surface potential in transistors. While negative-capacitance transition is reported in polycrystalline Pb(Zr_0.2Ti_0.8)O₃ (PZT) and HfZrO₂ (HZO) thin-films in few microseconds timescale, low SS is not persistent over a wide range of drain current when used instead of conventional dielectrics. In this work, the clear nano-second negative trans

We expand the class of curves $(φ_1(t),φ_2(t)),\ t\in[0,1]$ for which the $\ell^2$ decoupling conjecture holds for $2\leq p\leq 6$. Our class of curves includes all real-analytic regular curves with isolated points of vanishing curvature and all curves of the form $(t,t^{1+ν})$ for $ν\in (0,\infty)$.

A nano-biocomposite film with ultrahigh photoconductivity remains elusive and critical for bio-optoelectronic applications. A uniform, well-connected, high-concentration nanomaterial network in the biological matrix remains challenging to achieve high photoconductivity. Wafer-scale continuous nano-biocomposite film without surface deformations and cracks plays another major obstacle. Here ultrahigh photoconductivity is observed in deoxyribonucleic acid-molybdenum disulfide (DNA-MoS₂)

Despite the known behaviors of exciton-polariton in van der Waals transition metal dichalcogenides (TMDs), achieving electrical control over these polaritons remains a challenge, particularly for manipulating multiple polariton states and further tuning polariton screening in polaritonics. Here, we identify various polariton states via electrical bias within a monolayer of n-type MoS₂. The MoS₂ channel was squeezed within a distributed Bragg reflector microcavity which was