Cheol‐Woong Yang
성균관대학교 Materials Science and Engineering · 재료과학
이 교수의 연구실은 반도체 소자 및 에너지 변환 소재의 표면 및界面 거동을 중심으로 나노구조 재료의 물리적·화학적 특성과 기계적 안정성을 규명하는 데 중점을 두고 있습니다. 특히 페로브스카이트 태양전지의 표면 패assing, 구리 인터커넥트의 수소화막 안정성, 그래핀의 두께 분석 및 메테오라이트의 냉각 속도 분석 등 다양한 나노미세 구조에서의 상전이 및 표면 반응 메커니즘을 고해상도 분석 기법을 통해 규명하고 있습니다. 이는 고성능 전자소자 및 지속 가능한 에너지 기술 개발에 기여하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Understanding the interplay between the surface structure and the passivation materials and their effects associated with surface structure modification is of fundamental importance; however, it remains an unsolved problem in the perovskite passivation field. Here, we report a surface passivation principle for efficient perovskite solar cells via a facet-dependent passivation phenomenon. The passivation process selectively occurs on facets, which is observed with various post-treatment materials
Abstract— A new empirical cooling rate indicator for metal particles is proposed. The cooling rate indicator is based on the relationship between the size of the island phase in the cloudy zone, which abuts the outer taenite rim (clear taenite I), and the cooling rate of the host meteorite as obtained by conventional metallographic techniques. The size of the island phase was measured by high‐resolution scanning electron microscopy (SEM) in 26 meteorites and decreases from 470 nm to 17 nm, while
We observed graphene flakes on a SiO 2 /Si substrate and confirmed the variation in the thickness of the flakes by optical microscopy, Raman spectroscopy and scanning electron microscopy (SEM). We were able to clearly distinguish the thickness variation of the graphene provided a low primary electron acceleration voltage was used. It was found that different contrasts in SEM images at low acceleration voltages could be attributed to the fact that the generation of secondary electrons emitted fro
The size of the advanced Cu interconnects has been significantly reduced, reaching the current 7.0 nm node technology and below. With the relentless scaling-down of microelectronic devices, the advanced Cu interconnects thus requires an ultrathin and reliable diffusion barrier layer to prevent Cu diffusion into the surrounding dielectric. In this paper, amorphous carbon (a-C) layers of 0.75-2.5 nm thickness have been studied for use as copper diffusion barriers. The barrier performance and therm
