Daewoong Kwon
한양대학교 융합전자공학부 · 공학
다운 군 교수의 연구실은 신경형 컴퓨팅 구현을 위한 고성능 유기물 기반 합성 시냅스 소자 개발에 초점을 맞추고 있습니다. 주로 페로일렉트릭 필드효과트랜지스터(FeFET), 페로일렉트릭 터널 재결합장치(FTJ), 그리고 HfZrO₂ 기반 혼합상 페로일렉트릭 소자에서의 전하 이동, 표면 트랩, 저주파수 노이즈 등 소자 물리적 특성과 신경형 학습 정확도 간의 상관관계를 깊이 있게 분석하고 있습니다. 특히, 에너지 효율성과 신뢰성을 확보한 신경형 반도체 소자 설계 및 시스템 수준의 신경망 시뮬레이션을 융합한 연구를 수행하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
With the recently increasing prevalence of deep learning, both academia and industry exhibit substantial interest in neuromorphic computing, which mimics the functional and structural features of the human brain. To realize neuromorphic computing, an energy-efficient and reliable artificial synapse must be developed. In this study, the synaptic ferroelectric field-effect-transistor (FeFET) array is fabricated as a component of a neuromorphic convolutional neural network. Beyond the single transi
In recent years, neuromorphic computing has been rapidly developed to overcome the limitations of von Neumann architecture. In this regard, the demand for high‐performance synaptic devices with high switching speeds, low power consumption, and multilevel conductance is increasing. Among the various synaptic devices, ferroelectric tunnel junctions (FTJs) are promising candidates. While previous studies have focused on improving reliability of FTJs to enhance the synaptic behavior, low‐frequency n
A ferroelectric thin‐film transistor (FeTFT)‐based synaptic device with an indium–gallium–zinc oxide (IGZO) channel and a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure is reported. The fabricated FeTFT exhibits a highly linear conductance response (| α | = 0.21) with a large dynamic range ( G max / G min ≈ 53.2), although identical program pulses are applied to the device. In addition, because the inner metal layer of the FeTFTs has an MFMIS structure, the electric field is
We investigate the variability of a ferroelectric FET (FEFET) in program operation using low-frequency noise (LFN) spectroscopy. Contrary to the previous report, LFN characteristics of FEFETs differ significantly depending on the program [low threshold voltage (Vth)] or erase state [high Vth)] [Shin et al., IEEE Electron Device Lett. 43, 13 (2022)]. Furthermore, the 1/f noise variation of the FEFETs is much larger in the program state than that in the erase state. It is revealed that the change
A material design method is proposed using ferroelectric (FE)-antiferroelectric (AFE) mixed-phase HfZrO<sub>2</sub> (HZO) to achieve performance improvements in morphotropic phase boundary (MPB) field-effect transistors (MPB-FETs), such as steep subthreshold swing (SS) and non-hysteretic on-current (I<sub>on</sub>) enhancement. Capacitance (small-signal and quasi-static) and transient current measurements of MPB-FETs confirmed that near-threshold voltage (V<sub>TH</sub>) capacitance amplificatio
ABSTRACT In this work, the polarization‐dependent operating characteristics of TiN/Hf x Zr 1‐x O 2 (HZO)/SiO 2 /Si ferroelectric FETs (FeFETs) are investigated, and remote HZO/SiO 2 interface traps ( D it,FE/DE ) are quantitatively separated from Si/SiO 2 interface traps ( D it0 ). X‐ray photoelectron spectroscopy (XPS) reveals an oxygen‐vacancy ( V O )‐rich HfSiO x layer at the HZO/SiO 2 interface. Based on the transistor operation theory and trap/polarization‐switching charge distribution, the
