김은규 교수

We demonstrated p-type conduction in MoS₂ grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS₂ with a triangular shape and 15-µm grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A_1g and E¹_2g modes for both the pristine and P-doped samples was 19.4 cm^-1. In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS<sub>2</sub

Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, "carristor") with a configuration similar to the metal-insulator-semiconductor struc

Molybdenum disulfide (MoS₂) film fabricated by a liquid exfoliation method has significant potential for various applications, because of its advantages of mass production and low-temperature processes. In this study, residue-free MoS₂ thin films were formed during the liquid exfoliation process and their electrical properties were characterized with an interdigitated electrode. Then, the MoS₂ film thickness could be controlled by centrifuge condition in the rang

The structural and electrical properties of titanium dioxide (TiO2) thin films grown on n-type InP(100) substrate by low-pressure metal-organic chemical-vapor deposition have been studied with postannealing. The thin films of TiO2 were deposited at a low temperature of 350 °C using titanium isopropoxide and oxygen. After a postgrowth annealing by the rapid thermal annealing method at a temperature of 850 °C for 15 s, the TiO2/InP structure of only the anatase phase with (101) and (200) peaks was

Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS₂ FET. By applying back-gate bias, protons from an H-TFSI drople

Because the power conversion efficiency (PCE) of hybrid halide perovskite solar cells (PSCs) could exceed 24%, extensive research has been focused on improving their long-term stability for commercialization in the near future. In a previous study, we reported that the addition of a number of ionized iodide (triiodide: I₃^-) ions during perovskite film formation significantly improved the efficiency of PSCs by reducing deep-level defects in the perovskite layer. Understandin