Eun‐Chel Cho 교수

Silicon (Si) quantum dot (QD) materials have been proposed for 'all-silicon' tandem solar cells. In this study, solar cells consisting of phosphorus-doped Si QDs in a SiO(2) matrix deposited on p-type crystalline Si substrates (c-Si) were fabricated. The Si QDs were formed by alternate deposition of SiO(2) and silicon-rich SiO(x) with magnetron co-sputtering, followed by high-temperature annealing. Current tunnelling through the QD layer was observed from the solar cells with a dot spacing of 2

Photovoltaic (PV) modules are generally considered to be the most reliable components of PV systems. The PV module has a high probability of being able to perform adequately for 30 years under typical operating conditions. In order to evaluate the long-term performance of a PV module under diversified terrestrial conditions, outdoor-performance data should be used. However, this requires a wait of 25 years to determine the module reliability, which is highly undesirable. Thus, accelerated-stress

We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum

Crystalline silicon single quantum wells (QWs) were fabricated by high-temperature thermal oxidation of ELTRAN® (Epitaxial Layer TRANsfer) silicon-on-insulator (SOI) wafers. The Si layer thicknesses enclosed by thermal SiO2 range from 0.8 to 5 nm. Luminescence energies from such QWs vary from 1.77 to 1.35 eV depending on the Si layer thickness, without evidence for interface-mediated transition seen in earlier work. The ability to detect quantum-confined luminescence seems to arise from the use

Twenty-three percent of carbon emissions come from fossil fuels used in transportation. Electric vehicles are suggested as alternatives to fossil-fueled vehicles. Cars having vehicle integrated photovoltaics (VIPV) on the roof have recently been launched, aiming to increase fuel efficiency and increase maximum mileage by supplying electricity to the vehicle when needed. VIPV needs to be light in terms of efficiency. The use of polymeric materials, made of low-iron tempered glass on the front tha

In this work, to ameliorate the quantum efficiency (QE), we made a valuable development by using wide band gap material, such as lithium fluoride (LiFx), as an emitter that also helped us to achieve outstanding efficiency with silicon heterojunction (SHJ) solar cells. Lithium fluoride holds a capacity to achieve significant power conversion efficiency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET

Crystalline silicon single quantum wells (QWs) with a minimum Si layer thickness of around 1nm were fabricated by high temperature thermal oxidation of separation by implantation of oxygen (SIMOX) and epitaxial layer transfer (ELTRAN®) silicon-on-insulator (SOI) wafers. Not only Si thickness but also defect-free SOI materials may be important factors for observation of quantum-confined transition in the Si QWs. Si QWs fabricated from SIMOX SOI wafers showed strong interface-mediated luminescence