성균관대학교 · 재료과학
Ghulam Dastgeer 교수의 연구실은 2차원(2D) 물질 기반의 이종구조 및 초박막 전자 소자를 중심으로 연구를 진행하고 있습니다. 특히, 반도체 물질 간의 반데르발스 힘을 이용한 원자 두께의 정밀한 적층을 통해 고성능 트랜지스터, 광검출기, 바이오센서 등 다양한 응용 기기의 설계와 기초 물리 메커니즘을 탐구하고 있습니다. 연구는 주로 모리브덴 디텔루라이드, 게르마늄 셀라이드, 블랙 포논 등 신소재를 활용한 초박막 이종접합 소자의 전기적·광전적 성능 향상에 초점이 맞춰져 있습니다. 특히, 고정도 정류비, 낮은 슈트키 장벽, 높은 감도 등의 특성을 확보함으로써 차세대 나노전자 및 포인트온케어 의료 기기의 실현 가능성을 모색하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Abstract Bipolar junction transistors (BJTs), the basic building blocks of integrated circuits, are deployed to control switching applications and logic operations. However, as the thickness of a conventional BJT device approaches a few atoms, its performance decreases substantially. The stacking of atomically thin 2D semiconductor materials is advantageous for manufacturing atomically thin BJT devices owing to the high carrier density of electrons and holes. Here, an atomically thin n–p–n BJT d
Recently, van der Waals heterostructures (vdWHs) based on transition-metal dichalcogenides (TMDs) have attracted significant attention owing to their superior capabilities and multiple functionalities. Herein, a novel vdWH field-effect transistor (FET) composed of molybdenum ditelluride (MoTe<sub>2</sub> ) and palladium diselenide (PdSe<sub>2</sub> ) is studied for highly sensitive photodetection performance in the broad visible and near-infrared (VNIR) region. A high rectification ratio of 6.3
Abstract The most emerging 2D‐materials‐based heterostructures are considered promising candidates because of their multifunctional logic applications for electric and optoelectronic devices. Here, a high gate tunable rectification in van der Waals heterostructure composed of n‐type rhenium disulfide (n‐ReS 2 ) and p‐type germanium selenide (p‐GeSe), using pure Ohmic contacts, is reported. The large rectification ratio (RR) deprived of any Schottky contribution is tuned up to 4 × 10 5 because of
Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheets have drawn much attention because of their small band gap semiconductor characteristics along with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with v
A lateral phototransistor structure based on mechanically exfoliated multilayer black arsenic (b-As) is produced to test its in-plane anisotropy of photoelectrical properties. First, the morphology and structure of the b-As flake are investigated with respect to light polarization and crystal structure orientation. Then, the Raman modes, demonstrating a strong anisotropic nature of twofold symmetry for in-plane vibrations and fourfold symmetry for out-of-plane vibrations, allow us to define the
Since two-dimensionalal (2D) materials have distinct chemical and physical properties, they are widely used in various sectors of modern technologies. In the domain of diagnostic biodevices, particularly for point-of-care (PoC) biomedical diagnostics, 2D-based field-effect transistor biosensors (bio-FETs) demonstrate substantial potential. Here, in this review article, the operational mechanisms and detection capabilities of biosensing devices utilizing graphene, transition metal dichalcogenides
Van der Waals (vdW) heterostructures composed of atomically thin two-dimensional (2D) materials have more potential than conventional metal-oxide semiconductors because of their tunable bandgaps, and sensitivities. The remarkable features of these amazing vdW heterostructures are leading to multi-functional logic devices, atomically thin photodetectors, and negative differential resistance (NDR) Esaki diodes. Here, an atomically thin vdW stacking composed of p-type black arsenic (b-As) and n-typ
Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO<sub>2</sub>/WTe<sub>2</sub>)
With perovskite materials, rapid progress in power conversion efficiency (PCE) to reach 25% has gained a significant amount of attention from the solar cell industry. Since the development of solid-state perovskite solar cells, rapid research development and investigation on structure design, device fabrication and fundamental studies have contributed to solid-state perovskite solar cells to be a strong candidate for next-generation solar energy. The promising efficiency with low-cost materials
Solar water evaporation is vital for addressing global water scarcity, particularly in regions with limited freshwater. Through the utilization of photothermal materials, solar water evaporation harnesses solar radiation to generate heat, which in turn accelerates the evaporation of water, producing clean drinking water. Subsequently, the vapor is condensed to produce fresh water, offering a sustainable solution to water scarcity. This research field has garnered immense scientific interest, wit