Gyu‐Tae Kim
고려대학교 공과대학 기계공학과 · 공학
김규태 교수의 연구실은 2차원 물질과 나노소재를 활용한 고성능 전자 및 에너지 장치의 개발에 중점을 두고 있습니다. 특히 모재스티드 화합물(MoS₂) 기반 트랜지스터의 전자적 특성 향상, 고속 충전 리이on 이온 배터리의 전극 설계, 나노섬유 및 나노와이어 기반 광전자 소자에서의 기계적·전기적 특성 분석이 핵심 연구 주제입니다. 다양한 표면 도핑, 인터페이스 제어, 나노패턴링 기반 전기화학적 성능 향상 전략을 응용하여 나노전자 및 에너지 변환 소자에 응용 가능한 기초 기술을 개발하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the i
We present an amorphous Si anode deposited on a Cu nanopillar current collector, fabricated using a thermal roll-to-roll process followed by electroformation and LPCVD, for application in high-rate Li-ion batteries. Cu nanopillar current collectors with diameters of 250 and 500 nm were patterned periodically with 1 μm pitch and 2 μm height to optimize the diameters of the pillars for better electrochemical performance. Void spaces between Cu nanopillars allowed not only greater effective control
A simple and general technique for producing a suspended nanofiber has been developed using coordinate markers and a sacrificial layer of poly(methylmethacrylate). The simple procedure does not involve etching processes or chemical vapor deposition and makes it easier to investigate the physical properties of nanofibers in a suspended configuration. As a demonstration, a suspended carbon nanotube rope was fabricated and Young’s modulus was determined to be 0.4 TPa from the force calibration of a
Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS<sub>2</sub>) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS<sub>2</sub> FETs were enhanced at room temperature. Extracted field effect mobil
Abstract We report on the fabrication and optoelectronic properties of p‐n heterojunction arrays of p + ‐type Si and aligned n‐type SnO 2 nanowires with high rectification ratios of >10 4 at ±15 V. The electrical stability of the p‐n heterojunction devices was improved by coating the junction with poly(methylmethacrylate) to minimize the degradation of the interface layer at the junction. As a photodiode an enhanced UV photosensitivity higher than 10 2 was recorded under reverse bias. Using a
