Han‐Ill Yoo
서울대학교 공과대학 기계공학부 · 재료과학
한일 유 교수의 연구실은 산화물 전도체, 특히 반도체 및 전도성 산화물의 비스티오이오메트리 및 결함 구조에서 기인하는 전기적 성질과 이동 메커니즘을 중심으로 연구를 진행하고 있습니다. 주로 산소 비스티오이오메트리, 산소 이격자 및 전공정의 동적 거동을 전도도 리라크세이션 기법을 통해 분석하며, 고온에서의 화학적 확산 및 결함 동역학을 규명하고자 합니다. 특히 페로브스카이트 구조를 가진 BaTiO₃ 및 스트론티아계 산화물에서의 전도도, 산소 분압 및 수증기 분압에 따른 비스티오이오메트리 변화를 정량적으로 분석합니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
The electrical-insulation degradation of BaTiO3 is now of growing interest as the BaTiO3-based dielectric layers of multilayer ceramic capacitors are getting thinner to submicron thicknesses. The degradation is understood to be due to the electrotransport of oxygen vacancies and may be monitored by the colors emanating from the cathode and/or anode. In the case of single crystal BaTiO3, a brown color emanates from the anode and a blue color from the cathode. We will experimentally review the gen
The oxidation and hydration kinetics of a proton conductor oxide, SrCe(0.95)Yb(0.05)O(2.975), were examined via conductivity relaxation upon a sudden change of oxygen activity in a fixed water-activity atmosphere, and vice versa, in the ranges of -4.0 < log a(O(2)) < or = 0.01 and -5.0 < log a(H(2)O) < -2.0 at 800 degrees C. It was found that under an oxygen-activity gradient in a fixed water-vapor-activity atmosphere, the conductivity relaxation with time is monotonic with a single relaxation t
Oxygen (nonstoichiometry) re‐equilibration kinetics was examined, via a conductivity relaxation method, on 1 m/o donor (La)‐doped BaTiO 3 (nominal composition, Ba 0.99 La 0.01 Ti 0.9975 O 3 ) against oxygen partial pressure in the range of −16<log ( P O2 / atm)≤ 0 at 1200°C. The kinetics has been found to be onefold with a single relaxation time or twofold with two different relaxation times depending on oxygen activity. It is attributed to the relative contributions depending on oxygen activ
The chemical diffusivity of 1.8 mol% aluminum‐doped BaTiO 3−δ was measured on single‐crystal specimens, as a function of ambient oxygen partial pressure, in the range 10 −18 atm ≤ P O2 ≤ 1 atm and at temperatures of 800°≤ T ≤ 1100°C, via a conductivity‐relaxation technique. As in the polycrystalline, undoped BaTiO 3−δ described in Part II of this work, the chemical diffusivity exhibited a maximum, of thermodynamic origin, approximately at the stoichiometric composition (δ= 0). The measured diffu
Electrical conductivity relaxations were measured at a fixed temperature on proton-conducting upon sudden changes of oxygen activity in fixed water-vapor activity atmospheres and vice versa, in the ranges of and , respectively. It has been confirmed that the conductivity relaxes generally with two different relaxation times or twofold, but always nonmonotonically upon hydration/dehydration and monotonically upon oxidation/reduction. This twofold relaxation is attributed to the superposition of t
La(2)NiO(4+delta) is an oxygen excess compound (delta > 0) with oxygen interstitials (O(i) and holes (h*) in majority, which deviates positively from the ideal-dilute-solution behavior of defects. It was earlier attempted to interpret this positive deviation by taking into account the activity coefficients of both O(i) and h*. In this work, we examined the nonstoichiometry, electrical conductivity, and thermopower against oxygen activity in the entire stability range of the oxide at 800 degrees
Article Cross Effect Between Electronic and Ionic Flows in Semiconducting Transition Metal Oxides was published on February 1, 1990 in the journal Zeitschrift für Physikalische Chemie (volume 168, issue 2).
Insulation resistance degradation of dielectric BaTiO(3) is expected to be closely correlated to its defect structure frozen in from elevated processing temperatures. For BaTiO(3), respectively doped with variable-valence (Mn(Ti)) and fixed-valence acceptors (Al(Ti)), their defect structures were frozen in by quenching at different equilibrium oxygen activities in the range of -18 < log a(O(2))< or = 0 at 1000 and 900 degrees C, respectively, and their electrical conductivities were measured aga