김희웅 교수

ClinicalTrials.gov NCT03205969; http://clinicaltrials.gov/ct2/show/NCT03205969 (Archived by WebCite at http://www.webcitation.org/71jfSBOq9).

Resistive random access memory (RRAM) devices are fabricated through a simple solution process using glucose, which is a natural biomaterial for the switching layer of RRAM. The fabricated glucose-based RRAM device shows nonvolatile bipolar resistive switching behavior, with a switching window of 10³ . In addition, the endurance and data retention capability of glucose-based RRAM exhibit stable characteristics up to 100 consecutive cycles and 10⁴ s under constant voltage st

We aimed to evaluate the effect of chitosan oligosaccharide (GO2KA1) supplementation on glucose control in subjects with prediabetes. This study was a randomized, double-blind, placebo-controlled clinical trial. Subjects with prediabetes were randomly assigned to the GO2KA1 intervention group or the placebo group for 12 weeks. We assessed the serum levels of glucose, insulin, and C-peptide by a 2 hour value in the 75 g oral glucose tolerance test (OGTT), HbA1c, pro-inflammatory cytokines, and pl

Abstract Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the publication of more than 1,300 related papers. Although the number of researches on oxide semiconductors has continued to increase year by year, the average field‐effect mobility of oxide semiconductor thin‐film transistors (TFTs) has not shown significant improvement; from 2010 to 2018; the average field‐effect mobility of vacuum‐processed n‐type oxide TFTs is around 20 cm 2 /Vs. To investigate the obstacl

P-type copper oxide (Cu_<i>x</i>O) thin-film transistors (TFTs) with enhanced switching characteristics were fabricated by introducing a sputter-processed capping layer capable of controlling the back-channel phase (labeled as phase-controlling layer, PCL). By optimizing the processing conditions (the deposition power and postdeposition annealing parameters), the switching characteristics of the TFTs achieved a subthreshold swing of 0.11 V dec^-1, an on/off current ratio (<i>

A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorpora

We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuO _x) thin films by reacting with CuO _x. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuO _x thin-film transistors (TFTs), switching was evid

To evaluate the safety and efficacy [intraocular pressure (IOP)-lowering effect and medication use] of a single trabecular microbypass stent (iStent; Glaukos Corp, San Clemente, CA) for medically controlled open-angle glaucoma.This retrospective case series included 42 eyes of 34 patients with medically controlled open-angle glaucoma with IOP less than 21 mm Hg. Clinical outcomes analyzed were IOP, medication use, corrected distance visual acuity (CDVA), and surgical complications. Surgical succ

We introduced an organic interlayer into the Schottky contact interface to control the contact property. After inserting an 11-nm-thick polyethylenimine (PEI) interlayer between the aluminum (Al) source/drain electrode and the cuprous oxide (Cu₂O) channel layer, the Cu₂O thin-film transistors (TFTs) exhibited improved electrical characteristics compared with Cu₂O TFTs without a PEI interlayer; the field-effect mobility improved from 0.02 to 0.12 cm²/V

Parallel aligned mesopore arrays in pyramidal-shaped GaN are fabricated by using an electrochemical anodic etching technique, followed by inductively coupled plasma etching assisted by SiO2 nanosphere lithography, and used as a promising photoelectrode for solar water oxidation. The parallel alignment of the pores of several tens of micrometers scale in length is achieved by the low applied voltage and prepattern guided anodization. The dry etching of single-layer SiO2 nanosphere-coated GaN prod

In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 seconds) characteristics, without significant degradation, demonstrating its stable data storage capability and reliability. To investigate the switching mechanism of the glucose-based RRAM, various organic materials were prepared for the switching

MFI is closely related to biological characteristics of both primary tumors and their metastases, and has a prognostic value for survival after metastasis. We therefore suggest investigation into treatments targeting improvement of MFI as a potential novel strategy.

Breast cancer is the most commonly diagnosed cancer among women worldwide. Breast cancer patients experience significant distress relating to their diagnosis and treatment. Managing this distress is critical for improving the lifespan and quality of life of breast cancer survivors. This study aimed to assess the level of distress in breast cancer survivors and analyze the variables that significantly affect distress using machine learning techniques. A survey was conducted with 641 adult breast

Abstract For visible light‐based multilevel photomemories, indium‐gallium‐zinc‐oxide (IGZO, In:Ga:Zn = 1:2.8:1.4)‐based phototransistors capable of detection and storage in the visible light region are fabricated through the facile polydimethylsiloxane (PDMS) treatment, a process of exfoliating the hardened PDMS after coating on the gate insulator (GI) via a drop‐casting process. Here, PDMS residues form on the GI by exfoliation induced subgap states in the front channel of IGZO. Subgap states a