The University of Tokyo · 물리·천문학
후지오카 히로시 교수의 연구실은 고성능 nitride 계 반도체 소자 개발을 목표로 하며, 특히 펄스 스퍼터링을 활용한 고순도 GaN 및 AlGaN 에피택셜 성장 기술에 중점을 두고 있습니다. 유연성과 대면적 적용이 가능한 금속 필름 기반 GaN 성장 기반 기술을 개발하여, 저비용으로 대면적 광전자 소자 및 고성능 전력 소자 응용을 실현하고자 합니다. 특히 GaN 기반 LED, HEMT 등에서의 극저저항 접합 및 극대화된 전자 이동도 달성을 위한 핵심 기술 개발을 진행하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
GaN films were grown on a multilayer graphene (MLG)/amorphous SiO2 stack by pulsed sputtering deposition and their structural properties were investigated. The GaN films on MLG show high c-axis orientation. In addition, the GaN films exhibit coexisting zincblende and wurtzite phases, but the zincblende phase is suppressed by the insertion of AlN interlayers. The polarity control of the GaN films was demonstrated using AlN interlayers with and without surface oxidation. These results indicate tha
Abstract This paper reports AlN barrier Al 0.5 Ga 0.5 N high electron mobility transistors (HEMTs) with heavily Si-doped degenerate GaN contacts prepared by pulsed sputtering deposition. Selectively regrown n-type GaN contacts exhibit typical degenerate properties with the electron concentration and mobility of 2.6 × 10 20 cm −3 and 115 cm 2 V −1 s −1 , respectively, resulting in a record low contact resistance R C of 0.43 Ω mm for the AlN/Al 0.5 Ga 0.5 N HEMTs. The AlN/Al 0.5 Ga 0.5 N HEMTs dis
GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used,
