전형탁 교수

The formation mechanisms and properties of TiSi2 on Si are investigated. The particular emphasis is in relating the nucleation, morphology, and phase stability of the films. TiSi2 films were prepared by deposition of Ti on atomically clean silicon substrates in ultrahigh vacuum. The silicide formation was initiated either by in situ annealing or deposition onto heated substrates. The island formation of TiSi2 and surface and interface morphologies of TiSi2 were examined by scanning electron micr

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS₂) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly cryst

Abstract We deposited ZnO thin films by atomic layer deposition (ALD) and then investigated the chemical and electrical characteristics after plasma treatment. The chemical bonding states were examined by X‐ray photoelectron spectroscopy (XPS). The XPS spectra of O 1s showed that the intensity of oxygen deficient regions of the ZnO film decreased from 27.6 to 19.4%, while the intensity of the oxygen bound on the surface of the ZnO film increased from 15.0 to 21.9% as plasma exposure times increa

TiN film was deposited on Si substrate by using an atomic layer chemical vapor deposition (CVD) system. In this system, the TiCl4 and NH3 gases were supplied, separately and Ar purge gas was added between the source and reactant gases to suppress the direct reaction. The microstructure of TiN was observed to be the columnar grain structure. The chemical species was analized by Auger electron spectroscopy (AES) and the Cl content in TiN film was detected below the detection limit of AES which was

We demonstrate enhanced resistive switching (RS) stability, as measured by distribution, power consumption, and memory window, using different oxygen contents in a Ta oxide (TaOx) layer with a Pt top electrode and a TiN bottom electrode. The stability of the Pt/TaOx/TiN RRAM device increases as the oxygen contents of the TaOx layer increase. When oxygen is introduced during TaOx deposition, conventional bipolar RS (BRS) switches to self-compliant BRS, and distribution is improved within 200 repe

We report here that SnS₂ films deposited at 150 °C and annealed at below 350 °C have good potential for using 2D SnS₂ in flexible electronic devices.

Abstract A multilayer of Al doped ZnO/gold/Al doped ZnO (AZO/Au/AZO) was deposited by atomic layer deposition (ALD), and its structural, electrical, and optical properties were investigated. The thin Au interlayer was deposited by e‐beam evaporator and showed a series of islands. As the Au interlayer thickness increased, the Au islands coalesced resulting in a continuous Au film at 12 nm or thicker. As the Au interlayer thickness increased to 12 nm, the carrier concentration increased from 1.3 ×

Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm−1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 n