Jin Jang 교수

Highly efficient green, red, and blue perovskite light-emitting diode based metal-oxide charge injection layers are demonstrated. This is an important step toward the realization of next-generation solid-state lighting and devices for use in full-color large-area display applications. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited o

Ambipolar perovskite field-effect transistors and inverters with balanced mobilities are demonstrated. Thin-film field-effect-transistor-like inverters are developed, and a maximum gain of 23 in the first quadrant for V_DD = 80 V is obtained.

Zinc-oxide (ZnO) is widely used as an n-type electron transporting layer (ETL) for quantum dot (QD) light-emitting diode (QLED) because various metal doping can be possible and ZnO nanoparticle can be processed at low temperatures. We report here a Li- and Mg-doped ZnO, MLZO, which is used for ETL of highly efficient and long lifetime QLEDs. Co-doping, Mg and Li, in ZnO increases its band gap and electrical resistivity and thus can enhance charge balance in emission layer (EML). It is found also

Flexible displays are of great interest especially for mobile applications. Currently, there are no active-matrix flexible displays on the market, even though research has been carried out continuously over several years. Here, we introduce flexible displays and the prototype devices that have been developed. Organic thin-film transistors have been fabricated on plastic substrates for display backplanes. We describe the performance of our transistors made using a self-organization process. Final

Abstract A 2 in. active‐matrix light‐emitting diode (AMLED) display by integration of the micro‐LED onto the oxide thin‐film transistor (TFT) backplane using flip chip bonding is reported. A blue‐emitting micro‐LED (µ‐LED) with a size of 90 × 50 µm 2 is fabricated on the GaN epi grown on a sapphire substrate. The amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) TFT on glass exhibiting the mobility of 18.4 cm 2 V −1 s −1 , turn‐on voltage ( V ON ) of 0.2 V, and subthreshold swing 0.25 V dec −1 , is u

Zinc oxide (ZnO) nanoparticles (NPs) are widely used as electron-transport layers in quantum dots (QDs) light-emitting diodes (QLEDs). In this work, we show that the size of the NPs can be tuned with the sol–gel synthesis temperature while keeping a constant mass yield. As the NP size decreases, the surface defect density reduces and the band gap broadens. In return, it prevents exciton quenching at the ZnO NPs/emitting QDs (core–shell CdSe@ZnS) interface. Moreover, as the conductivity of the Zn

The effect of active layer (amorphous indium–gallium–zinc oxide, a‐IGZO) splitting on the performances of back‐channel‐etched (BCE) and etch‐stopper (ES) thin‐film transistors (TFTs) on polyimide substrate is studied. While the performance of BCE TFT is independent of active layer splitting, the performance of ES TFT is improved significantly by splitting the active layer into 2–4 µm width along the channel. The saturation mobility is enhanced from 24.3 to 76.8 cm 2 V −1 s −1 and this improvemen

Abstract A fine patternable quantum dots (QDs) color conversion layer (CCL) for high resolution and full color active matrix (AM) micro‐LED (μ‐LED) display is demonstrated. QDs CCL could be patterned until 10 μm using photolithography process. It is found that multicoatings with red and green QDs (R‐ and G‐QDs) CCLs on LED array can provide full color AM display.

Abstract An amorphous indium gallium zinc oxide (a‐IGZO) layer is deposited on very thin conductive amorphous indium zinc oxide (a‐IZO) thin film to demonstrate high‐performance, coplanar thin‐film transistors (TFTs) with dual‐channel oxide semiconductor architecture. Based on material properties, a conduction band offset (∆ E C ) of ≈0.28 eV between a‐IZO and a‐IGZO layers and a conduction band bending of ≈0.3 eV at a‐IGZO/gate insulator (GI) interface exist. Through the electrical characteriza