Jun Hyung Lim 교수

The incorporation of foreign elements into ZnO nanostructures is of significant interest for tuning the structure and optical and electrical properties in nanoscale optoelectronic devices. In this study, Ga-doped 1-D ZnO nanorods were synthesized using a hydrothermal route, in which the doping content of Ga was varied from 0% to 10%. The pn heterojunction diodes based on the n-type Ga-doped ZnO nanorod/p-type Si substrates were constructed, and the effect of the Ga doping on the morphology, chem

This letter reports the utility of using the sol-gel process for exploring the library of multicomponent ZnO-based oxides as an active layer of thin film transistors. We chose InGaZnO as a starting material and modulated the Ga content to examine the potential of this material. Increasing the Ga ratio from 0.1 to 1 brought about a dynamic shift in the electrical behavior from conductor to semiconductor. This exploratory work critically helped us fabricate a device with robust device performance

Amorphous InGaZnO semiconductors have been rapidly developed as active charge-transport materials in thin film transistors (TFTs) because of their cost effectiveness, flexibility, and homogeneous characteristics for large-area applications. Recently, InZnSnO (IZTO) with superior mobility (higher than 20 cm² V^-1 s^-1) has been suggested as a promising oxide semiconductor material for high-resolution, large-area displays. However, the electrical and physical charact

We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion c

Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical characteristics for application in thin‐film transistor (TFT) applications such as low off current and relatively high mobility. However, most recently, as the developing and expanding application fields, conventional IGZO is a challenging aspect because higher mobility and excellent step‐coverage are required to be applied to high‐resolution displays and 3D NAND. In this regard, atomic layer deposition (ALD)

Atomic layer deposition (ALD) is a promising deposition method to precisely control the thickness and metal composition of oxide semiconductors, making them attractive materials for use in thin-film transistors because of their high mobility and stability. However, multicomponent deposition using ALD is difficult to control without understanding the growth mechanisms of the precursors and reactants. Thus, the adsorption and surface reactivity of various precursors must be investigated. In this s

ZnO nanorods doped with In or Ga were synthesized by a facile hydrothermal process on sol–gel deposited ZnO seed layers. The effects of dopants on the morphology, chemical bonding structure, and optical property of the ZnO nanorods were discussed based on the field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) results. XRD and XPS results indicated that In or Ga ions were doped in the ZnO lattice. Undop

Indium oxide (In2O3) thin films were deposited via thermal atomic layer deposition (ALD) to exploit their potential as semiconductors in thin-film transistors (TFTs), using a new liquid type indium complex precursor (In(CH3)3[CH3OCH2CH2NHtBu]). In2O3 films were deposited successfully at lower temperatures and exhibited a satisfactory growth rate (∼0.35 Å per cycle). In addition, we investigated the effect of deposition temperature from 100 to 250 °C on the microstructure and chemical and physica

As the scale-down and power-saving of silicon-based channel materials approach the limit, oxide semiconductors are being actively researched for applications in 3D back-end-of-line integration. For these applications, it is necessary to develop stable oxide semiconductors with electrical properties similar to those of Si. Herein, a single-crystal-like indium-gallium-zinc-oxide (IGZO) layer (referred to as a pseudo-single-crystal) is synthesized using plasma-enhanced atomic layer deposition and f

Thin film transistors with high mobility and bias stability were fabricated using an In–Ga–Zn–O (IGZO)/zinc oxynitride (ZnON) tandem structure. In addition to increasing the saturation mobility from 13.44 cm2/V s to 24.75 cm2/V s, the hysteresis and device degradation under positive bias stress decreased more than five times as the ZnON semiconductor was added to the IGZO layer. These results were due to the reduced number of trapped electrons caused by the lower amount of relatively deep trap s

Indium oxide (InOx) thin films have attractive carrier transport properties for oxide semiconductors because of the large isotropic 5 s orbital overlap. In this study, InOx films were deposited by plasma-enhanced atomic layer deposition (PEALD). We evaluated the effects of the ALD process conditions such as the process temperature, plasma power, and plasma duration time on the microstructure, physical, chemical, and electrical properties of the as-deposited InOx films. The InOx film deposited at