The University of Tokyo · 공학
K. Shiba 교수의 연구실은 고성능 3D-스택드 반도체 소자 및 나노소재의 개발에 초점을 맞추고 있습니다. 특히 3D 스타킹 기반 SRAM의 저전력·고속 통신을 위한 유도 커플링 인터페이스 기술과, 원자재 특성 최적화를 통한 고내구성 텅스텐 기반 스틸의 개발을 주요 연구 방향으로 삼고 있습니다. 이는 차세대 반도체 및 fusion 반도체 시스템의 핵심 기술을 확보하기 위한 것입니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
A toughness-improved type of F82H steel called F82H mod3 has been developed, and the material properties and irradiation behavior have been examined. The significant modification of the chemical composition is the reduction of Ti (<10 ppm) and N (<20 ppm) as impurities and the increase of Ta (0.1%) as an alloying element. The ductile-to-brittle transition temperature (DBTT) is improved to -90°C from -45°C for F82H IEA without change in strength. However, the creep rupture time of F
A 28.8-GB/s 96-MB 3D-stacked SRAM is presented. A total of eight SRAM dies, designed in a 40-nm CMOS process, are vertically stacked and connected using an inductive coupling wireless link with a low-voltage NMOS push-pull transmitter that reduces the power of the link by 35% with a 0.4-V power supply. The SRAM utilizes an inverted bit insertion scheme that compensates for the degradation of the first transmitted bit, a coil termination scheme that aims to eliminate the ringing of 3D inductive c
A 0.7-pJ/bit, 8.5-Gb/s/link inductive coupling interchip wireless communication interface for a 3D- stacked static-random access memory (SRAM) has been developed in a 7-nm FinFET process. A new physical placement method that allows coils to be placed over off-the-shelf SRAM macros with small magnetic field attenuation, together with the use of synchronous communication using Manchester encoding and a clocked comparator to enable the detection of small-swing signals, achieves a 26% reduction in S
