大阪大学 · Engineering
야무라 카즈야 교수의 연구실은 고도로 정밀한 반도체 및 전기적 특성을 요구하는 신소재, 특히 4H-SiC와 같은 난가공 재료의 초미세 가공 기술을 핵심으로 합니다. 플라즈마, 초음파, 전기화학적 기계가공을 융합한 혁신적 가공 기법을 개발하여, 표면 거칠기 저감과 기계적 내구성 향상을 동시에 달성하고자 합니다. 특히, 고정밀 가공 공정에서의 도메인 특성 제어와 표면 품질 향상에 초점을 맞춘 기초 및 응용 연구를 진행하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
We established an efficient ultraprecise figuring process in which numerically controlled plasma chemical vaporization machining (NC-PCVM) and numerically controlled elastic emission machining (NC-EEM) are utilized serially. Intensity images of the x rays reflected by total reflection mirrors greatly fluctuate with respect to the figure error of spatial wavelength ranging from submillimeter to 10 mm. In NC-PCVM, figure errors for spatial wavelength range longer than 10 mm are removed efficiently
A novel machining method combined with the irradiation of atmospheric pressure plasma was proposed for the finishing of difficult-to-machine materials. The irradiation of helium-based water vapor plasma efficiently oxidized the surface of single-crystal 4H-SiC (0001), and a ball-on-disc test using an alumina ceramic ball revealed that the wear rate of SiC, the surface of which was modified by the irradiation of water vapor plasma, is 20-fold higher than that of the surface without plasma irradia
An ultrasonic-assisted electrochemical mechanical polishing (UAECMP) technique that combines ultrasonic vibration and electrochemical mechanical polishing (ECMP) is proposed. The effect of ultrasonic vibration on the anodic oxidation rate of a 4H-SiC (0001) surface was studied, and it was confirmed that ultrasonic vibration significantly enhanced the anodic oxidation of SiC. Compared with conventional anodic oxidation, the oxidation rate increased by about 34% with ultrasonic assistance (UA) in
