Kwang‐Ho Kwon
고려대학교 공과대학 기계공학과 · 공학
Kwang-Ho Kwon 교수의 연구실은 반도체 소자 및 투명 산화물 반도체 기반의 전자 소자 개발에 중점을 두고 있으며, 특히 열 알터네이티브 레이어 에피터리(atomic layer deposition)를 활용한 고성능 산화물 투명 트랜지스터 및 광감지소자에 대한 연구를 진행하고 있습니다. 플라즈마 에칭 공정 최적화, 반응성 이온 에칭 메커니즘 분석, 그리고 환경 친화적인 플루오르카본 가스의 응용 등 반도체 공정 기술의 핵심 요소를 다루며, 고성능 및 지속가능성에 기여하는 기술 개발을 추구합니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Stoichiometric crystalline binary metal oxide thin films can be used as channel materials for transparent thin film transistors. However, the nature of the process used to fabricate these films causes most binary metal oxide thin films to be highly conductive, making them unsuitable for channel materials. We overcame this hurdle by forming stoichiometric ultra-thin (5 nm) crystalline In2O3 films by using a thermal atomic layer deposition method. Specifically, (3-(dimethylamino)propyl)dimethylind
This work discusses the effect of gas mixing ratio on the HBr/X (, He, or ) plasma parameters, steady-state densities, and fluxes of active species in the planar inductively coupled plasma reactor. The investigation combined plasma diagnostics by Langmuir probes and a global (zero-dimensional) plasma model with Maxwellian approximation for the electron energy distribution function. The dilution of HBr by Ar results in a maximum effect on the HBr electron impact dissociation kinetics and provides
This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO<sub>2</sub>, and Si<sub>x</sub>N<sub>y</sub>) as well as for the silicon itself in multi-component fluorocarbon gas mixtures. The main subjects were the three-component systems composed either by one fluorocarbon component (CF<sub>4</sub>, C<sub>4</sub>F<sub>8</sub>, CHF<sub>3</sub>) with Ar and O<sub>2</sub> or by tw
In this work, the high-performance transparent Al:InZnSnO/InZnO/Al:InZnSnO tri-layer thin-film phototransistors are reported. They show a high field-effect mobility of 40.1 cm2/V·s and an excellent high photoresponsivity of 25 000 A/W, a photosensitivity of 3.3 × 107, a specific detectivity of 4.3 × 1017 cm·Hz1/2·W−1 under the illumination at 460 nm with an intensity of 140 μW/cm2. The persistent photoconductivity inherent in phototransistors made of oxide semiconductors overcome by a pulsed gat
The inductively coupled plasma etching of platinum with Ar/Cl2 gas chemistries is described. X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical binding states of the etched surface with various Ar/(Ar+Cl2) mixing ratios. Atomic percentage of Cl element increases with increasing Ar/(Ar+Cl2) mixing ratio with the exception of Ar/(Ar+Cl2) mixing ratio of 1. At the same time, the peaks that seem to be subchlorinated Pt at XPS narrow scan spectra are found and Cl–Pt bonds rapi
