Masafumi Inaba 교수

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lat

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluate

Gas sensors with carbon nanotubes (CNTs) and tin dioxide (SnO2) nanoparticles for nitrogen dioxide (NO2) detection are fabricated using a two-step dielectrophoretic (DEP) assembly method, and the NO2 gas detection properties are investigated. For the fabrication of the sensor, CNTs assemble between electrodes by a DEP force, followed by SnO2 nanoparticle decoration also by a DEP assembly method, and the assembled CNTs act as high electric field electrodes. The formed CNT/SnO2 gas sensors exhibit

Hydrogen-terminated diamond metal-insulator-semiconductor field-effect transistors are candidates for power devices that require a high breakdown field and stable, high-frequency operation. A two-dimensional hole-gas layer can form on H-terminated diamond surfaces. To understand the electrical properties of bare H-terminated diamond surfaces, we investigate the surface impurities on a H-terminated diamond surface in a vacuum-gap gate structure, which uses a H-terminated diamond channel and a vac

A vertical edge graphite layer (VEG) fabricated on a diamond (001) substrate and the recovery of the crystallinity of the diamond substrate following high‐dose ion implantation and high‐temperature annealing (HTA) was investigated. The Al ions were implanted into the diamond (001) surface at 773 K (500 °C), followed by HTA at 1973 K (1700 °C). The graphite edges were vertically oriented, but each domain was randomly rotated in the in‐plane direction, which was confirmed via multiple cross‐sectio

Abstract Dielectrophoretic (DEP) manipulation of a diamond particle has potential application in the detection of DNA or other bio-molecules. We investigate the fundamental DEP and surface properties of submicron diamond particles. Diamond particles were dispersed in a NaCl solution and dropped on a castle-walled electrode. An AC electric field was applied to determine the DEP crossover frequency as a function of the solution conductivity. The surface conductance of the diamond particles was the

Understanding of the contact conductivity of carbon nanotubes (CNTs) will contribute to the further application of CNTs for electronic devices, such as thin film transistors whose channel or electrode is made of dispersed CNTs. In this study, we estimated the contact conductivity of a CNT/CNT interface from the in-plane conductivity of an uncapped CNT forest on SiC. Investigation of the electrical properties of dense CNT forests is also important to enable their electrical application. The in-pl

Heat-conduction sheets, a type of thermal interface material consisting of an elastomer matrix and thermally conducting fillers, require high thermal conductivity. Diamond particles with high thermal conductivity are a candidate for the filler in heat-conduction sheets. Electrical alignment is an effective method for filler alignment to achieve high thermal conductivity. In the alignment of filler particles in an elastomer matrix, the effect of the gravitational force is crucial and filler parti

It was found that three synthetic anthracycline analogs lacking not only antitumor activity but also calcium-antagonizing action possessed an activity to potentiate vincristine cytotoxicity against vincristine-resistant P388 leukemia. ID-8279, one of these analogs, significantly reversed resistance to vincristine and daunorubicin by increasing their intracellular accumulation.

Understanding the electrical contact properties of carbon nanotube (CNT) ends is important to use the high conductance of CNTs in the CNT on-axis direction in applications such as through-silicon via structures. In this study, we experimentally evaluated the contact resistivity between single-/multi-walled CNT ends and a metal nanoprobe using conductive atomic force microscopy (C-AFM). To validate the measured end contact resistivity, we compared our experimentally determined value with that obt

For sp² or sp³ carbon material growth, it is important to investigate the precursors or intermediates just before growth. In this study, the density of ethylene (C₂ H₄ ) outside the plasma discharge space and just before reaching the carbon nanotube (CNT) growth region is investigated by vacuum ultraviolet absorption spectroscopy for plasma discharge in an antenna-type remote plasma chemical vapor deposition with a CH₄ /H₂ system,

Carbon nanotubes (CNTs) are promising materials for gas sensing because of their large specific area and high sensitivity to charge differentiation. In CNT-based field-effect transistors (FETs) for gas sensing, both CNT potential modulation in the channels and Schottky barrier height modulation at the CNT/metal electrode contact influence the current properties. However, researchers have not used Schottky barrier height modulation for gas detection. To investigate and compare the effects of Scho

The electrical contact properties of silicon carbide (SiC) and carbon nanotubes (CNTs) were measured by conductive atomic force microscopy (C-AFM). A CNT forest was synthesized by SiC surface decomposition. Trenches, which electrically separate the conduction area, were fabricated using a focused ion beam (FIB) without a cover layer, and the resistance of each island was measured by C-AFM. From the dependence of the resistance on the CNT forest island size, the contact resistance between the CNT