Miyoung Kim
서울대학교 Materials Science and Engineering · 재료과학
Miyoung Kim 교수의 연구실은 전자재료 및 나노구조 물질의 전자적, 전기적 성질을 원자적 수준에서 규명하는 데 초점을 맞추고 있습니다. 주로 산화물 반도체(예: SrTiO₃, GaN), MXene, 도핑된 폴리머 등에서의 비스토이키오메트리성, 결정자와의 상호작용, 전도성 상 형성 메커니즘을 전자현미경 및 밀도함수이론 기반 계산을 통해 연구합니다. 특히 다결정 산화물의 전기적 거동 원인을 밝히는 데 기여한 '이중 쇼트키 장벽' 이론은 핵심 성과입니다. 또한 전자기 간섭 차단, 고속 리트로핏 액티브 디스플레이 등 응용 기술 개발에도 기여하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
A combination of experiments and first-principles calculations is used to show that grain boundaries in SrTiO3 are intrinsically nonstoichiometric. Total-energy calculations reveal that the introduction of nonstoichiometry into the grain boundaries is energetically favorable and results in structures that are consistent with atomic-resolution Z-contrast micrographs. Electron energy-loss spectra provide direct evidence of nonstoichiometry. These results and calculations for nonstoichiometric grai
Polymer-stabilized blue phase liquid crystal displays based on the Kerr effect are emerging due to their submillisecond response time, wide view and simple fabrication process. However, the conventional in-plane switching device exhibits a relatively high operating voltage because the electric fields are restricted in the vicinity of the electrode surface. To overcome this technical barrier, we propose a partitioned wall-shaped electrode configuration so that the induced birefringence is uniform
MXene and conductive polymers are attractive candidates for electromagnetic interference shielding (EMI) applications. The MXene-PAT-conductive polymer (CP) composites were fabricated by a cost-effective spray coating technique and characterized using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. A new approach has been developed for the synthesis of exfoliated MXene. The MXene-PAT-poly(<i>p</i>-aminophenol)-polyanilin
Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.
Predicting the performance of thermoelectric materials requires precise knowledge of the Fermi surface and near-lying electronic structures. While ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ is a major constituent of the active layers in commercial thermoelectric coolers, ab initio electronic structure theory heretofore has failed to reproduce the measured experimental band gap. Herein, we report self-consistent screened-exchange local density approximation (sX-LDA) calculations for the electronic stru
Three central themes in the study of the phenomenon of resistive switching are the nature of the conducting phase, why it forms, and how it forms. In this study, the answers to all three questions are provided by performing switching experiments in situ in a transmission electron microscope on thin films of the model system polycrystalline SrTiO<sub>3</sub> . On the basis of high-resolution transmission electron microscopy, electron-energy-loss spectroscopy and in situ current-voltage measuremen
In this work, we studied how TiO2 and ZrO2 coatings enhance the CO oxidation performance of SiO2-supported Pt catalysts under conditions relevant to automotive emissions control. SiO2 was coated with metal oxides TiO2 or ZrO2 by sol-gel method and the subsequent Pt loading was done by incipient wetness method. The prepared catalysts Pt/TiO2-SiO2 and Pt/ZrO2-SiO2 were compared with Pt/SiO2 and Pt/Al2O3 in fresh, sulfated, and hydrothermally aged states. The structure of the catalysts was characte
Recently, achieving flexible and highly efficient light‐emitting elements is the most noticeable demand for lighting or displays. Here, fully flexible gallium nitride (GaN) light‐emitting diodes (LEDs) are demonstrated based on a unique transfer method. The LED structure consisting of GaN pyramid arrays are first fabricated on an amorphous glass‐based template with a low‐temperature gallium nitride/titanium (LT‐GaN/Ti) hetero‐interface, then released and embedded into a flexible or stretchable s
In order that the supply of electric power remain stable and sustainable, a certain level of power quality must be maintained while securing energy resources and resolving environmental issues. The distributed generation (DG) has become an essential and indispensable element of such distribution systems from both an environmental and an energy security perspective. However, the installation of DGs in distribution systems may cause variations of voltage on distribution feeder because the DG power
Overcharging is expected to be one of the solutions to overcome the current energy density limitation of lithium-ion battery cathodes, which will support the rapid growth of the battery market. However, high-voltage charging often poses a major safety threat including fatal incendiary incidents, limiting further application. Numerous researches are dedicated to the disadvantages of the overcharging process; nonetheless, the urgent demand for addressing failure mechanisms is still unfulfilled. He
Graphene oxide (GO) is reduced spontaneously when palladium nanoparticles are decorated on the surface. The oxygen functional groups at the GO surface near the nanoparticles are absorbed to the palladium to produce a palladium oxide interlayer. Palladium therefore grows on the GO with preferred orientations, resulting in unique microstructural and electrical properties.