Muhammad Naqi 교수

Abstract With an increasing demand for artificial intelligence, the emulation of the human brain in neuromorphic computing has led to an extraordinary result in not only simulating synaptic dynamics but also reducing complex circuitry systems and algorithms. In this work, an artificial electronic synaptic device based on a synthesized MoS 2 memristor array (4 × 4) is demonstrated; the device can emulate synaptic behavior with the simulation of deep neural network (DNN) learning. MoS 2 film is di

Abstract Low-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique

Abstract Molybdenum disulfide (MoS 2 ) semiconductors have closely been studied for potential applications in detectors, optoelectronics, and flexible electronics due to its high electrical and robust mechanical performance. Herein, the first experimental study of the high‐speed ultrasound wave detection by the combinational structure of flexible MoS 2 field‐effect transistor (FET) and piezoelectric device based on polyvinylidene fluoride trifluoro ethylene P(VDF‐TrFE) is reported. The proposed

Abstract 2D materials, specifically MoS 2 semiconductors, have received tremendous attention for photo‐sensing applications due to their tunable bandgap and low noise levels. A unique photodetector using multilayer MoS 2 as the semiconductor channel, in which the gate electrode of the device is permanently connected to the grounded source electrode to introduce rectification, is reported. The proposed grounded‐gate photodiode exhibits high photoresponsivity of 1.031 A W −1 , excellent photodetec

2D materials, specifically transition metal dichalcogenides (TMDs), have gained massive attention for their potential use in high-integration memory technologies due to their exceptional carrier transport, atomically thin structure, and superior physical and electronic properties. High-density memory processors and complex hardware neural architectures based on TMDs have been developed and shown to have exceptional memory properties, making them a potential competitor to conventional Si technolo

High-speed electronic (HSE) systems are an emerging technology with potential applications in various fields, including biomedical imaging devices, display systems, ultrasound detectors, and object recognition. This report presents a study on low-temperature processed inverted-staggered bottom-gate a-IGZO thin-film transistors (TFTs) for measuring fast current switching at higher frequencies. The IGZO TFT exhibits an excellent mobility of 10.51 cm2/(V·s) and a higher on/off ratio of 3.2 × 105. A

Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM dev

Abstract Here, a novel method is introduced to synthesize the uniform hybrid structure of tellurium nanowires (TeNWs) and tellurium‐film (Te‐film) for flexible field‐effect transistor (FET) array device to exhibit excellent electrical, mechanical, and optical performance. To fabricate such a device, all the processes are performed at low temperatures (&lt; 100 °C) with easy processing methods. The uniformity of the hybrid structure of TeNWs/Te‐film is confirmed using scanning electron microscopy

Semiconductors processed at low temperature for complementary metal–oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the processes have been done at low temperature. The electrical measurements of proposed TFTs exhibit high mobility (> 100 and > 3 cm2/Vs in case of ZnON and Te TFTs, respectively) and a stable on/off curr

This study investigates a micro light-emitting diode (µLED) pixel circuit using the heterogeneous integration of complementary field-effect transistors (CFETs). The CFETs are fabricated using a semiconductor layer composed of tellurium (Te) and indium-gallium-zinc oxide (IGZO) layers. Te and IGZO layers in the heterostructure IGZO/Te film exhibit hexagonal and amorphous phases, respectively, indicating that each layer maintains independent material characteristics. The fabricated IGZO/Te CFETs e

Oxide semiconductors are of particular interest in the field of integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with high linearity based on the unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) based on a-SIZO exhibits maximum mobility of 9.8 cm2/Vs at VD of 5 V, high on/off ratio of ~ 106, and stable thres

Few-shot anomaly detection (FSAD) using registration-based techniques for the identification of aberration in image and video feeds has attracted a great lot of researchers in the field. Introduction of transformer with the siamese network has made metric-based learning promising in the identification of anomalies in image streams with only a few shots of comparative support sets. Inspired by how humans use their comparative analysis for identification of differences in images, a registration-ba