Tokyo Institute of Technology · 재료과학
Nobuhiro Matsushita 교수의 연구실은 저온에서의 습식 공정을 활용한 페라이트 및 산화물 투명 전도성 필름의 합성과 응용을 핵심으로 합니다. 특히, 90°C 이하의 낮은 온도에서 스플린스프레이 기반의 플레이팅 공정을 통해 Ni-Zn, Ni-Zn-Co 페라이트 필름과 ZnO, SnO₂ 기반의 전도성 및 습도 감지 필름을 제작하며, 전자기 노이즈 차단 소자, 저온 공정 기반 전자소자 등 실용적 응용을 목표로 하고 있습니다. 또한, 광학적 특성 제어와 전기적 성능 향상을 위한 표면 및 나노구조 제어 기법에 대한 깊이 있는 연구를 수행하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Ni–Zn ferrite films were prepared by spin-spray ferrite plating method at 90 °C on glass substrates from a reaction solution of FeCl2(+FeCl3)+NiCl2+ZnCl2 and an oxidizing solution of NaNO2+CH3COONH4. The complex permeability μ=μ′−iμ″ values of the as-plated films were measured at frequencies up to 3 GHz. The Ni0.28Zn0.18Fe2.54O4 film 0.40 μm in thickness plated using the mixture of Fe2+ and Fe3+ as iron ions exhibited a high μ′ of around 42 and a resonance frequency fr of 1.2 GHz. This fr value
Ni–Zn–Co ferrite films were deposited by the spin-spray ferrite plating from an aqueous solution. Film with optimized Zn and Co contents (i.e., Ni0.22Zn0.52Co0.03Fe2.23O4) exhibited the real permeability μr′ higher than 260 at frequencies up to 130 MHz, and the imaginary permeability μr″ higher than 100 in the extremely wide frequency range from 100 MHz to 1 GHz. Prepared at the very low temperature of 90 °C without postdeposition annealing, these films are promising to be actually applied to el
Selection of the excitation wavelength at nonresonant and resonant Raman conditions provided detection selectivity in the tetragonal and cubic phases in CeO(2)-ZrO(2) nanocrystals, respectively. It was suggested that cubic-phase domains containing Ce(3+) deficiencies were involved in the tetragonal-phase matrix.
Thin films with cobalt ferrite layer on ZnO underlayer were prepared at substrate temperature T/sub s/ in the range of 80 approximately 600 degrees C by a facing targets sputtering apparatus. Crystallites in specimen films revealed almost perfect orientation of
High electric conductivity was achieved in ZnO films prepared by a low-temperature (<100 °C) wet-chemical process and subsequent UV treatment by a commercial blacklight-blue lamp with a central wavelength of 360 nm and output power of 2.0 mW cm−2. The UV treatment to the as-deposited film successfully decreased the electric resistivity of the film by three orders of magnitude from 11 to 4.4 × 10−3 Ω cm. The resistivity was not restored to the initial value even after dark storage for 50 days, in
An all-solution-processed transparent tin oxide (SnO<sub>2</sub>)-based humidity sensor was directly prepared on borosilicate glass (SnO<sub>2</sub>-G) and a flexible polyethylene terephthalate (SnO<sub>2</sub>-PET) substrate without using a template. The entire process included film deposition by a spin-spray process at 90 °C and subsequent hot water treatment (HWT) at 100 °C. The resistivity of the films dramatically decreased and had semiconductor characteristics after the HWT, even though th
