Sangsig Kim
고려대학교 전기전자공학부 · 공학
Sangsig Kim 교수의 연구실은 반도체 물성 및 신소재 기반의 차세대 메모리 소자 개발에 초점을 맞추고 있습니다. 고압 환경에서의 발광 특성 분석을 통해 간질라늄 nitride의 밴드 갭 변화를 규명하고, 유연한 투명 플라스틱 기반 투미드 산화물 메모리 소자에서 높은 저항비와 내구성을 확보한 바 있습니다. 또한, SOI 기반 p⁺-n-p-n 구조의 반도체 메모리 소자를 개발하여 초고속 라이팅, 긴 보존 시간, 낮은 전압에서의 높은 신뢰성과 내성능을 실현했습니다. 이는 향후 고성능·저전력 메모리 시스템의 핵심 기술로 주목받고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I2 exciton recombination line and the ‘‘yellow’’ band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor-acceptor-pair emission lines was analyzed at 9 K. From the I2 lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at
Resistance switching memory devices constructed on flexible plastic substrates via the spin-coating of titanium oxide solution were characterized in this study. The resistance switching memory device exhibited a ratio of the high resistance to low resistance states of more than 102, and this large resistance ratio was maintained even after 104 s. These memory characteristics are comparable to those of resistance switching memory devices based on titanium oxide films deposited on Si substrates. M
Abstract Memory hierarchy among conventional memory technologies is one of the main bottlenecks in modern computer systems; alternative memory technologies are thus necessary for quasi‐nonvolatile memory applications. Herein, a fully complementary metal‐oxide‐semiconductor‐compatible quasi‐nonvolatile memory composed of p + ‐n‐p‐n + silicon on a silicon‐on‐insulator substrate is presented. The quasi‐nonvolatile silicon memory device demonstrates high‐speed write capability ( ≤ 100 ns), long rete
