Sangwoo Lim
연세대학교 공과대학 재료공학과 · 공학
Sangwoo Lim 교수의 연구실은 반도체 소자에서의 신호 지연 문제를 해결하기 위한 저유전율 재료 개발에 초점을 맞추고 있습니다. 특히 F-doped SiO₂와 같은 저유전율 인터메탈 산화막을 PECVD 공정을 통해 고성능 및 우수한 스텝 커버리지로 제조하는 데에 기여하고 있으며, 이들의 유전율 감소 메커니즘을 분광학적 및 전기적 측정을 통해 규명하고 있습니다. 또한 ZnO 기반 페로마그네틱 박막 및 나노구조의 합성과 그 성장 메커니즘에 대해서도 연구를 진행하고 있어, 나노전자 소자 및 펌웨어 통합 기술에 기여하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
We report on the room-temperature hole-mediated ferromagnetism in Zn1-xMnxO thin films. Zn1-xMnxO (x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn1-xMnxO films were synthesized. The superconducting quantum interference device (SQUID) and alternating gradient magnetometer (AGM) results clearly showed ferromagnetic characteristics at room temper
The delay due to the dielectric constant of an interlayer film results in the limited performance of very large-scale integrated circuits (VLSI). One solution to this problem is the use of a low-dielectric-constant interlayer film such as F-doped SiO 2 . We were able to obtain F-doped SiO 2 films with dielectric constants as low as 2.3 and good step coverage by adding CF 4 to SiH 4 /N 2 O plasma-enhanced chemical vapor deposition (PECVD). Our study focuses on the mechanism of the decrease in the
One solution to signal delay in very large‐scale integrated circuits is to use a low dielectric constant interlayer film, such as F‐doped silicon dioxide . By adding to plasma‐enhanced chemical vapor deposition, we obtained F‐doped films with a dielectric constant as low as 2.6. We studied the mechanism behind this decrease in the dielectric constant by estimating the constants due to each polarization component (ionic, electronic, and orientational) using capacitance‐voltage (C‐V) measurements,
Use of F‐doped silicon dioxide film as a low dielectric constant intermetal film for ultralarge scale integrated circuits (ULSI) is useful from the viewpoint of product cost and compatibility with present processing technologies. By adding to plasma‐enhanced chemical vapor deposition, we obtained F‐doped films with a dielectric constant as low as 2.6. The mechanism behind this decrease was investigated by estimating the dielectric constants due to the polarization components using capacitance‐vo
