Seiji Samukawa 교수

Journal of Physics D: Applied Physics published the first Plasma Roadmap in 2012 consisting of the individual perspectives of 16 leading experts in the various sub-fields of low temperature plasma science and technology. The 2017 Plasma Roadmap is the first update of a planned series of periodic updates of the Plasma Roadmap. The continuously growing interdisciplinary nature of the low temperature plasma field and its equally broad range of applications are making it increasingly difficult to id

Abstract Low-temperature plasma physics and technology are diverse and interdisciplinary fields. The plasma parameters can span many orders of magnitude and applications are found in quite different areas of daily life and industrial production. As a consequence, the trends in research, science and technology are difficult to follow and it is not easy to identify the major challenges of the field and their many sub-fields. Even for experts the road to the future is sometimes lost in the mist. Jo

Abstract The 2022 Roadmap is the next update in the series of Plasma Roadmaps published by Journal of Physics D with the intent to identify important outstanding challenges in the field of low-temperature plasma (LTP) physics and technology. The format of the Roadmap is the same as the previous Roadmaps representing the visions of 41 leading experts representing 21 countries and five continents in the various sub-fields of LTP science and technology. In recognition of the evolution in the field,

To minimize radiation damage caused by charge buildup or ultraviolet and x-ray photons during etching, we developed a high-performance neutral-beam etching system. The neutral-beam source consists of an inductively coupled plasma (ICP) source and parallel top and bottom carbon plates. The bottom carbon plate has numerous apertures for extracting neutral beams from the plasma. When a direct current (dc) bias is applied to the top and bottom plates, the generated positive or negative ions are acce

Highly selective, highly anisotropic, notch-free and charge-build-up damage-free polycrystalline silicon etching is performed by using electron cyclotron resonance plasma modulated at a pulse timing of a few tens of microseconds. A large quantity of negative ions is produced in the afterglow of the pulse-time modulated plasma. The decay times of electron density, electron temperature and sheath potential are considerably reduced, which is attributable to negative ion generation. Furthermore, the

For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultralarge-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, I introduce the ultimate etching processes using neutral-beam sources and

This study examines modulated electron cyclotron resonance (ECR) plasma discharge occurring within a few tens of μs. It can control the generation of reactive species in plasmas. Reactive species are measured by an actinometric optical emission spectroscopy in the pulsed plasma. Good correlation is found between the density ratio of CF2 radicals and F atoms in the CHF3 plasma, and the combination of the pulse duration and pulse intervals. These characteristics are explained by the dependence of

Highly selective, highly anisotropic, notch-free, and charge-buildup damage-free silicon etching is performed using electron cyclotron resonance (ECR) Cl2 plasma modulated at a pulse timing of a few tens of microseconds. A large quantity of negative ions are produced in the afterglow of the pulse-time-modulated plasma. The decay times of electron density, electron temperature, and sheath potential are considerably reduced. This is attributable to negative-ion generation. Furthermore, the pulse-t

A 10–100 µ s modulated electron cyclotron resonance (ECR) plasma is discharged to control the generation of reactive species in high-density, low-pressure plasma. The density ratio of CF 2 radicals to F atoms in the CHF 3 plasma correlates well with the pulse duration. This is because the generation of reactive species in the ECR plasma depends on time (10–100 µ s). Moreover, we found that a collimated ion flux was generated in the pulsed plasma. This method achieves a high ratio of SiO 2 etchin

Highly selective, highly anisotropic, and notch-free etching for polycrystalline silicon is achieved in a few tens of μs pulse-time-modulated electron cyclotron resonance plasma. In the pulsed plasma, the selectivity ratio of polycrystalline silicon etching rate to the SiO2 etching rate is drastically improved with high etching rate, as compared with the ratio with a continuous discharge. Furthermore, vertical and notch-free phosphorus-doped polycrystalline silicon etching profiles can be achiev

To avoid several kinds of radiation damage caused by charge build-up and by ultraviolet and X-ray photons during etching processes, we have developed a high-performance, neutral-beam etching system. The neutral-beam source consists of an inductively coupled plasma (ICP) source and top and bottom carbon parallel plates. The bottom carbon plate includes numerous apertures for extracting neutral beams from the plasma. By supplying a direct current (DC) bias to the top plate, the generated ions are

To prevent several kinds of radiation damage caused by charge build-up and by ultraviolet and X-ray photons during etching processes, we have developed a high-performance, neutral-beam etching system. The neutral-beam source consists of an inductively coupled plasma (ICP) source and top and bottom carbon parallel plates. The bottom carbon plate includes many apertures for extracting neutral beams from the plasma. By supplying a positive or negative direct current (DC) bias to the top and bottom

Highly selective, highly anisotropic, notch-free and charge build-up damage-free polycrystalline silicon etching is achieved using an electron cyclotron resonance plasma modulated at a pulse time in the range of 10–20 μs. In this plasma, the selectivity ratio of the polycrystalline silicon etching rate to the SiO2 etching rate is increased significantly by the same etching rate as that attained using a continuous discharge. Additionally, vertical and notch-free phosphorus-doped polycrystalline s

Neutral beam (NB) based surface engineering on triboelectric materials and its effect on triboelectric performance.

The etching characteristics of polycrystalline silicon (poly-Si) by short-time modulated electron cyclotron resonance (ECR) determined by using a Cl2 etchant were investigated. It was found that the poly-Si etching rate was improved by increasing the pulse interval of the microwaves to more than 50 μs for a 50% duty ratio and applying a 600 kHz rf bias to the substrate. A large amount of negative chlorine ions are generated in the afterglow which occurs for more than 50 μs in high-density, low-p