Seongil Im
연세대학교 물리학과 · 재료과학
이 교수의 연구실은 투명 전자소자 및 2차원 물질 기반 전계효과 트랜지스터를 핵심으로 연구를 진행하고 있습니다. 특히 ZnO 기반 투명 TFT, 페로일렉트릭 메모리 장치, MoS2 및 희토류 디테르화합물 같은 2차원 반도체 소재를 활용한 고성능 소자 설계와 대면적 공정 기술 개발에 주력하고 있습니다. 연구는 나노소재의 물성 제어와 접촉 특성 최적화를 바탕으로 하여, 스마트 패널, 유기 에너지 장치, 내재성 메모리 등 미래형 전자소자 응용을 목표로 하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Transparent ZnO thin-film transistors (TFTs) with a defect-controlled channel and channel/dielectric interface maintain good photo-stability during device operation. The figure shows a cross-sectional view of a top-gate ZnO-based transparent TFT/storage capacitor cell structure, connected to front-panel organic-light-emitting-diode pixels to operate in bottom emission mode.
Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2 V−1 s−1 and large memory window of ≈20 V are achieved through the organic ferroelectric– inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.
Two MoS2 field-effect transistors are compared using graphene and Au/Ti source-drain contacts in respects of their Ohmic and OFF behavior on an identical MoS2 nanosheet. As a result, graphene-contact appears not only to show superior ohmic behavior to those of Au/Ti but also more enhanced OFF state behavior. Such results are attributed to the electric-field-induced work function tuning of exfoliated graphene.
Nanosheet transistors based on mechanically exfoliated MoS2 and other transition metal dichalcogenide layers have already been reported demonstrating good device performances. In an approach to synthesize a large area two-dimensional (2D) sheet, chemical vapor deposition methods were reported and the transfer of those sheets onto other arbitrary substrates was also attempted, although studies on the direct imprinting of such 2D semiconductor sheets are rare. Here, we report on a direct imprintin
