Shaili Falina 교수

A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material characteristics, including its high critical electric field, high saturation velocity, high electron mobility, and outstanding thermal stability. Therefore, the superior performance is represented by GaN-based high electron mobility transistor (

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that af

Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and continuous HMI monitoring is essential. Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. The aim of this review is to provide a condensed overview o

High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context

Recently, there has been increasing interest in electrochemical printed sensors for a wide range of applications such as biomedical, pharmaceutical, food safety, and environmental fields. A major challenge is to obtain selective, sensitive, and reliable sensing platforms that can meet the stringent performance requirements of these application areas. Two-dimensional (2D) nanomaterials advances have accelerated the performance of electrochemical sensors towards more practical approaches. This rev

In this paper, we report on the effect of carboxyl- and amine terminations on a boron-doped diamond surface (BDD) in relation to pH sensitivity. Carboxyl termination was achieved by anodization oxidation in Carmody buffer solution (pH 7). The carboxyl-terminated diamond surface was exposed to nitrogen radicals to generate an amine-terminated surface. The pH sensitivity of the carboxyl- and amine-terminated surfaces was measured from pH 2 to pH 12. The pH sensitivities of the carboxyl-terminated

This letter reports on the high voltage operations and high temperature operations of the transparent polycrystalline diamond field-effect transistor (TPD-FET). The devices were fabricated with a wide range of wide gate-drain lengths ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\textit {GD}}$ </tex-math></inline-formula> ) and a thick Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink

This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the first step, the V/III ratio was applied at 1902 and then at 3046 in the second step. The FWHMs of the XRD (002) and (102) peaks of the GaN layer were around 205 arcsec ((002) peak) and 277 arcsec ((102

• Innovative Design: A novel HEMT structure with triple trenches, resulting in a 52.4 % increase in V B . • Employed COMSOL Multiphysics simulations to analyze and optimize the impact of design parameters. • New trench structure effectively mitigates impact ionization and redistributes the electric field. This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is often limite

The feasibility of titanium oxide (TiO x ) encapsulation of the source/drain metal contacts of diamond solution‐gate field‐effect transistor (SGFET) for biosensor applications is explored. The SGFETs fabricated by this method show excellent FET characteristics. For comparison, the electrical characteristics performance of SGFET TiO x encapsulated devices with two different channel lengths of 100 and 1.5 μm is investigated. The miniature device with a channel length of 1.5 μm exhibits remarkable

• A novel modular AlGaN/GaN WGHEMT sensor platform and interchangeable ISM for any specific target detection. • Superior sensitivities for herbicide detection of 222.22µA mgL -1 and 761.029µA mgL -1 for glyphosate and paraquat, respectively. • Exceptional stability of 1% coefficient of variation (CV) with a broad detection range. This research work presents the development and characterization of a water-gated high electron mobility transistor (WGHEMT) sensor for real-time detection of herbicide