Shigefusa F. Chichibu 교수

Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the local

The emission mechanisms of strained InxGa1−xN quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. The absorption edge was modulated by the quantum confined Stark effect and quantum confined Franz-Keldysh effect (QCFK) for the wells, in which, for the first approximation, the product of the piezoelectric field, FPZ, and L exceed the valence band discontinuity, ΔEV. In this case, holes are confined in the triangular potential well formed at one side of the well produc

Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1−xN(x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.

Spatially resolved cathodoluminescence (CL) spectrum mapping revealed a strong exciton localization in InGaN single-quantum-wells (SQWs). Transmission electron micrographs exhibited a well-organized SQW structure having abrupt InGaN/GaN heterointerfaces. However, comparison between atomic force microscopy images for GaN-capped and uncapped SQWs indicated areas of InN-rich material, which are about 20 nm in lateral size. The CL images taken at the higher and lower energy side of the spatially int

Emission mechanisms of a device-quality quantum well (QW) structure and bulk three dimensional (3D) InGaN materials grown on sapphire substrates without any epitaxial lateral overgrown GaN base layers were investigated. The InxGa1−xN layers showed various degrees of in-plane spatial potential (band gap) inhomogeneity, which is due to a compositional fluctuation or a few monolayers thickness fluctuation. The degree of fluctuation changed remarkably around a nominal InN molar fraction x=0.2, which

Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ7c) band to the A (Γ9v) and B (Γ7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy kBT up to room temperature, which suggests the dominance of excitons in the PL spectra.

The emission mechanisms of bulk GaN and InGaN quantum wells (QWs) were studied by comparing their optical properties as a function of threading dislocation (TD) density, which was controlled by lateral epitaxial overgrowth. Slightly improved excitonic photoluminescence (PL) intensity was recognized by reducing TD density from 1010 cm−2 to less than 106 cm−2. However, the major PL decay time was independent of the TD density, but was rather sensitive to the interface quality or material purity. T

Room-temperature nonradiative lifetime (τnr) of the near-band-edge excitonic photoluminescence (PL) peak in {0001} polar, (112¯0), (11¯00), and (001) nonpolar GaN was shown to increase with the decrease in density or size of Ga vacancies (VGa) and with the decrease in gross density of point defects including complexes, leading to the increase in the PL intensity. As the edge threading dislocation density decreased, density or size of VGa tended to decrease and τnr tended to increase. However, th

The nonradiative lifetime (τNR) of the near-band-edge emission in various quality GaN samples is compared with the results of positron annihilation measurement, in order to identify the origin and to determine the capture-cross-section of the major intrinsic nonradiative recombination centers (NRCs). The room-temperature τNR of various n-type GaN samples increased with decreasing the concentration of divacancies composed of a Ga vacancy (VGa) and a N vacancy (VN), namely, VGaVN. The τNR value al

Exciton–polariton structures in a high-quality bulk ZnO single crystal were resolved at 8 K by means of polarized photoreflectance (PR) and photoluminescence measurements. The energies of the PR resonances corresponded to those of the upper and lower exciton–polariton branches, where A, B, and C excitons couple simultaneously to an electromagnetic wave. Longitudinal-transverse splitting of ground-state exciton polaritons and resonances due to the first excited states of respective excitons were

Band gap and excitonic resonance energies of high-quality bulk single crystals, polycrystalline thin films, and epitaxial layers of CuInSe2 and CuGaSe2 were determined as a function of temperature by means of photoreflectance, optical absorption (OA), and photoluminescence measurements. OA spectra were fit including excitonic absorption from low temperature up to room temperature (RT). The band gap energy of 1.032 eV and free exciton (FE) resonance energy of 1.024 eV were obtained at RT for stra

Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested.

The internal quantum efficiency (ηint) of the near-band-edge (NBE) excitonic photoluminescence (PL) in ZnO epilayers was significantly improved by eliminating point defects, as well as by the use of ZnO high-temperature-annealed self-buffer layer (HITAB) on a ScAlMgO4 substrate as epitaxial templates. Negatively charged Zn vacancy (VZn) concentration was greatly reduced by high-temperature growth, and slower postgrowth cooling (annealing) under minimum oxygen pressure further reduced the gross c