Shohei Kumagai 교수

Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a π-electron core containing electroneg

ConspectusOrganic semiconductors (OSCs) have attracted much attention because of their potential applications for flexible and printed electronic devices and thus have been extensively investigated in a variety of research fields, such as organic chemistry, solid-state physics, and device physics and engineering. Organic thin-film transistors (OTFTs), a class of OSC-based devices, have been expected to be an alternative of silicon-based metal oxide semiconductor field-effect transistors (MOSFETs

Building on significant developments in materials science and printing technologies, organic semiconductors (OSCs) promise an ideal platform for the production of printed electronic circuits. However, whether their unique solution-processing capability can facilitate the reliable mass manufacture of integrated circuits with reasonable areal coverage, and to what extent mass production of solution-processed electronic devices would allow substantial reductions in manufacturing costs, remain contr

LRG, produced by heart-infiltrating myeloid cells, suppresses adverse cardiac remodelling after MI as a novel cardioprotective factor. LRG signalling could be a therapeutic target against cardiovascular diseases.

Organic semiconductors (OSCs) have attracted growing attention for optoelectronic applications such as field-effect transistors (FETs), and coherent (or band-like) carrier transport properties in OSC single crystals (SCs) have been of interest as they can lead to high carrier mobilities. Recently, such p-type OSC SCs compatible with a printing technology have been used to achieve high-speed FETs; therefore, developments of n-type counterparts may be promising for realizing high-speed complementa

Abstract Complementary metal-oxide-semiconductor, an elementary building block, allows for a high degree of implementation of logic circuits with relatively low power consumption and low manufacturing cost, which plays a vital role not only in current Si electronics, but also in printed flexible devices. To meet the looming challenges of the Internet of Things, p-channel thin-film transistors (TFTs) with an excellent mobility and processability have been increasingly developed using organic semi

Variation of aggregated structures driven by side chains is a crucial issue in organic semiconductors (OSCs) for achieving high carrier mobility and device durability. In this work, phenylalkyl side chains composed of a rigid terminal phenyl group and a flexible alkyl linker were studied based on a state-of-the-art n-type π-electron system, 3,4,9,10-benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (BQQDI), from the viewpoints of aggregated structures and thin-film transistors. An ap

We synthesized and characterized bromide-bridged Pd(III) chain complexes, [Pd(en)2Br](MalCn-Y)2·H2O (en = ethylenediamine; MalCn-Y = dialkyl sulfomalonate; n: the number of carbon atoms) (n = 7 and 12). The compound with n = 7 showed charge-bistability near room temperature. In addition, it is shown that the Pd(III) state is maintained in the thin film state.

Quasi-one-dimensional halogen-bridged Pt, Pd, and Ni complexes (MX chains) are a family of materials with potential charge bistability: M(II)-M(IV) mixed valence charge-density-wave (CDW) and M(III) averaged valence Mott-Hubbard (MH) states can form. However, until recently, no examples of MX chains showing charge bistability have been reported. Charge-bistable Pd MX chains, [Pd(en)2Br](Y1-C(n))2·H2O (en = 1,2-diaminoethane; Y1-C(n) = dialkyl 2-sulfosuccinate; n = the number of carbon atoms in a

Organic field-effect transistors (OFETs) have attracted great attention as key elements in Internet-of-Thing (IoT) devices due to their advantages of low cost and mass producibility made possible by printing technology. Such devices require organic semiconductors (OSCs) that intrinsically possess high carrier mobility and air stability. In addition, the demand for low-voltage operation and low power consumption has been increasing because the potential power sources for actual devices are implem

Abstract The past several decades have witnessed a vast array of developments in printable organic semiconductors, where successes both in synthetic chemistry and in printing technology constituted a key step forward to the realization of printed electronics. In this Review, we highlight specifically materials science, charge transport, and device engineering of—two-dimensional single crystals—. Defect-free organic single-crystalline wafers manufactured via a one-shot printing process allow rema

Operational stability, such as long-term ambient durability and bias stress stability, is one of the most significant parameters in organic thin-film transistors (OTFTs). The understanding of such stabilities has been mainly devoted to energy levels of frontier orbitals, thin-film morphologies, and device configuration involving gate dielectrics and electrodes, whereas the roles of molecular and aggregated structural features in device stability are seldom discussed. In this Letter, we report a