김수현 교수

The wafer-scale synthesis of MoS2 layers with precise thickness controllability and excellent uniformity is essential for their application in the nanoelectronics industry. Here, we demonstrate the atomic layer deposition (ALD) of MoS2 films with Mo(CO)6 and H2S as the Mo and S precursors, respectively. A self-limiting growth behavior is observed in the narrow ALD window of 155-175 °C. Long H2S feeding times are necessary to reduce the impurity contents in the films. The as-grown MoS2 films are

Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD).

Stabilizing atomically dispersed single atoms (SAs) on silicon photoanodes for photoelectrochemical-oxygen evolution reaction is still challenging due to the scarcity of anchoring sites. Here, we elaborately demonstrate the decoration of iridium SAs on silicon photoanodes and assess the role of SAs on the separation and transfer of photogenerated charge carriers. NiO/Ni thin film, an active and highly stable catalyst, is capable of embedding the iridium SAs in its lattices by locally modifying t

MoS₂ is an earth-abundant and low-cost HER electrocatalyst that can substitute noble metal catalysts. Here, we develop the atomic layer deposition (ALD) of MoS₂ nanomaterials on p-Si photocathodes for highly efficient and stable PEC water reduction reactions.

Atomic layer deposition (ALD) has become the most widely used thin-film deposition technique in various fields due to its unique advantages, such as self-terminating growth, precise thickness control, and excellent deposition quality. In the energy storage domain, ALD has shown great potential for supercapacitors (SCs) by enabling the construction and surface engineering of novel electrode materials. This review aims to present a comprehensive outlook on the development, achievements, and design

Future realization of a hydrogen-based economy requires a high-surface-area, low-cost, and robust electrocatalyst for the hydrogen evolution reaction (HER). In this study, the MoN _x thin layer is synthesized on to a high-surface-area three-dimensional (3D) nickel foam (NF) substrate using atomic layer deposition (ALD) for HER catalysis. MoN _x is grown on NF by the sequential exposure of Mo(CO)₆ and NH₃ at 225 °C. The thickness of the thin film is contr

The atomic layer deposition (ALD) of Ru using a metal–organic precursor, tricarbonyl(trimethylenemethane)ruthenium [Ru(TMM)(CO)3] and O2 as a reactant is reported. The high vapor pressure, thermal stability, and relatively small ligands of the precursor facilitate efficient ALD. Typical self-limiting growth and an ALD temperature window of 220–260 °C are observed along with significantly high growth per cycle (GPC) (∼1.7 Å) and short incubation cycles (∼6) at 220 °C. Density functional theory ca

Cobalt oxide (CoOx), an earth-abundant and low-cost oxygen evolving catalyst (OEC), has notable advantages as a top protection layer of photoanodes for solar-driven water oxidation because of its desirable durability. However, cobalt oxides exist as various phases, such as Co(II)O, Co2(III)O3, Co3(II,III)O4, and the (photo)electrochemical properties of CoOx are significantly governed by its phase. Atomic layer deposition (ALD) is a suitable method to form a multifunctional layer for photoelectro

We present an atomic layer deposition (ALD) process for the synthesis of tin nitride (SnN_<i>x</i>) thin films using tetrakis(dimethylamino) tin (TDMASn, Sn(NMe₂)₄) and ammonia (NH₃) as the precursors at low deposition temperatures (70-200 °C). This newly developed ALD scheme exhibits ideal ALD features such as self-limited film growth at 150 °C. The growth per cycle (GPC) was found to be ∼0.21 nm/cycle at 70 °C, which decreased with increasing depositi