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Understanding the excitonic nature of excited states in two-dimensional (2D) transition-metal dichalcogenides (TMDCs) is of key importance to make use of their optical and charge transport properties in optoelectronic applications. We contribute to this by the direct experimental determination of the exciton binding energy (Eb,exc) of monolayer MoS2 and WSe2 on two fundamentally different substrates, i.e. the insulator sapphire and the metal gold. By combining angle-resolved direct and inverse p

The energy level alignments at donor/acceptor interfaces in organic photovoltaics (OPVs) play a decisive role in device performance. However, little is known about the interfacial energetics in polymer OPVs due to technical issues of the solution process. Here, the frontier ortbial line-ups at the donor/acceptor interface in high performance polymer OPVs, PTB7/PC₇₁BM, were investigated using in situ UPS, XPS and IPES. The evolution of energy levels during PTB7/PC₇₁BM interf

A comprehensive understanding of the energy level alignment mechanisms between two-dimensional (2D) semiconductors and electrodes is currently lacking, but it is a prerequisite for tailoring the interface electronic properties to the requirements of device applications. Here, we use angle-resolved direct and inverse photoelectron spectroscopy to unravel the key factors that determine the level alignment at interfaces between a monolayer of the prototypical 2D semiconductor MoS₂ and co

Abstract Tuning the Fermi level (E F ) in two-dimensional transition metal dichalcogenide (TMDC) semiconductors is crucial for optimizing their application in (opto-)electronic devices. Doping by molecular electron acceptors and donors has been suggested as a promising method to achieve E F -adjustment. Here, we demonstrate that the charge transfer (CT) mechanism between TMDC and molecular dopant depends critically on the electrical nature of the substrate as well as its electronic coupling with

Van der Waals heterostructures consisting of 2D semiconductors and conjugated molecules are of increasing interest because of the prospect of a synergistic enhancement of (opto)electronic properties. In particular, perylenetetracarboxylic dianhydride (PTCDA) on monolayer (ML)-MoS₂ has been identified as promising candidate and a staggered type-II energy level alignment and excited state interfacial charge transfer have been proposed. In contrast, it is here found with inverse and dire

Abstract Generally, the lack of long-range order in materials prevents from experimentally addressing their electronic band dispersion by angle-resolved photoelectron spectroscopy (ARPES), limiting such assessment to single crystalline samples. Here we demonstrate that the ARPES spectra of azimuthally disordered transition metal dichalcogenide (TMDC) monolayers with 2 H phase are dominated by their band dispersion along the two high symmetry directions Γ-K and Γ-M. We exemplify this by analyzing

Abstract Precise control over polarity in field‐effect transistors (FETs) plays a pivotal role in the design and construction of complementary metal–oxide–semiconductor (CMOS) logic circuits. In particular, achieving such precise polarity control in 2D semiconductors is crucial for the further development of advanced electronic applications beyond unit devices. This paper presents a systematic investigation on the reversible transition of carrier types in a 2D MoTe 2 semiconductor under differen

The electrochemical reactivity of various trace contaminants in coal gas, i.e., Hg/HgS, PbS, CdS, Sn/SnCl/sub 2//SnCl/sub 4/, and TiO/sub 2/, in coal gas at the nickel anode and the nickel oxide cathode in a molten carbonate fuel cell have been examined thermodynamically. Calculations indicate that only SnCl/sub 4/ would undergo reduction at the cathode to SnCl/sub 2/. Other species would remain intact. Contaminants such as H/sub 2/S/SO/sub 2/ and HCl have also been included in the calculation.

Abstract Research in the field of organic electronics has witnessed dramatic improvements in device performance over the past several decades through an ever‐improving understanding of electron and hole movement and the development of new interfacial materials. In this study, a type of interfacial material that relies on ionic charges comprising metal:poly(styrenesulfonate) (PSS) polyelectrolytes are synthesized and investigated as structural analogs of the ubiquitously used poly(3,4‐ethylenedio

PbS quantum dots capped by ethanedithiol (PbS QD-EDT) and tetrabutylammonium iodide (PbS QD-TBAI) and supported by different substrates were examined in terms of Fermi level pinning (FLP), gap states, and electron and hole barriers (Φe and Φh, respectively) using ultraviolet and low-energy inverse photoemission spectroscopy. The former analysis showed that TBAI and EDT differed in their ability to induce gap-state passivation, with the corresponding energy difference determined as 4.0 eV. Two FL

Abstract Two-dimensional Ruddlesden–Popper (2DRP) perovskites are promising owing to their excellent environmental stability and competitive efficiency. During the fabrication process, 2DRP perovskites were often unintentionally exposed to light in the laboratory. However, the influence of light illumination on the surface structure of 2DRP during fabrication is unclear. Herein, the photodegradation of 2DRP perovskite (phenethylammonium lead iodide, PEA 2 PbI 4 ) is comprehensively investigated

NiO_<i>x</i> is a p-type semiconductor widely used as a hole transport material in perovskite solar cells (PSCs), yet the impact of fabrication methods on its interfacial properties and the underlying mechanisms remains unclear. This study investigates how the fabrication process─nanoparticle precursor (NP NiO_<i>x</i>) and sputtering deposition (SP NiO_<i>x</i>)─and interfacial space charge effects influence charge transport and device performance in NiO<sub><i>x</