Soon‐Yong Kwon
UNIST Materials Science and Engineering · 재료과학
Soon-Yong Kwon 교수의 연구실은 2차원 물질, 특히 그래핀, 텅스텐 디 tell루라이드, MXene 등 나노소재의 고도로 제어된 성장과 합성에 초점을 맞추고 있습니다. 특히 금속 기반 기질 위에서의 그래핀 성장 메커니즘과 2D 전이금속 디 chalcogenide(TMD)의 고순도·대면적 성장 기술 개발을 통해 전자 및 에너지 장치 응용을 위한 핵심 기반 기술을 확보하고자 합니다. 또한, 고성능 연료전지 및 뉴로모픽 컴퓨팅 소자에 응용 가능한 3D 그래핀 및 고질적 MXene의 대량 합성 전략 개발에도 기여하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
We report in situ scanning tunneling microscopy studies of graphene growth on Pd(111) during ethylene deposition at temperatures between 723 and 1023 K. We observe the formation of monolayer graphene islands, 200-2000 A in size, bounded by Pd surface steps. Surprisingly, the topographic image contrast from graphene islands reverses with tunneling bias, suggesting a semiconducting behavior. Scanning tunneling spectroscopy measurements confirm that the graphene islands are semiconducting, with a b
An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering t
The last decade has witnessed significant progress in two-dimensional van der Waals (2D vdW) materials research; however, a number of challenges remain for their practical applications. The most significant challenge for 2D vdW materials is the control of the early stages of nucleation and growth of the material on preferred surfaces to eventually create large grains with digital thickness controllability, which will enable their incorporation into high-performance electronic and optoelectronic
A simple and robust strategy to form uniform 3D graphene on Ni foam is developed to improve the performance and the durability of bipolar plates for polymer electrolyte membrane fuel cells.
Abstract 2D materials have attracted attention in the field of neuromorphic computing applications, demonstrating the potential for their use in low‐power synaptic devices at the atomic scale. However, synthetic 2D materials contain randomly distributed intrinsic defects and exhibit a stochasitc forming process, which results in variability of switching voltages, times, and stat resistances, as well as poor synaptic plasticity. Here, this work reports the wafer‐scale synthesis of highly polycrys
The practical application of 2D MXenes in electronic and energy fields has been hindered by the severe variation in the quality of MXene products depending on the parent MAX phases, manufacturing techniques, and preparation parameters. In particular, their synthesis has been impeded by the lack of studies reporting the synthesis of high-quality parent MAX phases. In addition, controllable and uniform deposition of 2D MXenes on various large-scale substrates is urgently required to use them pract
Layered metallic transition metal dichalcogenides (MTMDs) exhibit distinctive electrical and catalytic properties to drive basal plane activity, and, therefore, they have emerged as promising alternative electrocatalysts for sustainable hydrogen evolution reactions (HERs). A key challenge for realizing MTMDs-based electrocatalysts is the controllable and scalable synthesis of high-quality MTMDs and the development of engineering strategies that allow tuning their electronic structures. However,
We grew In-rich InGaN∕GaN multiple quantum wells (MQWs) using growth interruption (GI) by metalorganic chemical vapor deposition. The quality of overgrown InGaN∕GaN QW layers in MQWs was largely affected by the crystalline quality and interfacial abruptness of the underlying QW layer. Introduction of 10s GI was very effective in improving the crystalline quality and interfacial abruptness of InGaN QW layers, and we grew a ten periods of 1-nm-thick In-rich InGaN∕GaN MQW with 10s GI and obtained a
Following the celebrated discovery of graphene, considerable attention has been directed toward the rich spectrum of properties offered by van der Waals crystals. However, studies have been largely limited to their 2D properties due to lack of 1D structures. Here, the growth of high-yield, single-crystalline 1D nanobelts composed of transition metal ditellurides at low temperatures (T ≤ 500 °C) and in short reaction times (t ≤ 10 min) via the use of tellurium-rich eutectic metal alloys is report
A novel flexible transparent electrode (TE) having a trilayer-stacked geometry and high optoelectronic performance and operational stability was fabricated by the spin coating method. The trilayer was composed of an ultrathin graphene (Gr) film sandwiched between a transparent and colorless polyimide (TCPI) layer and a methanesulfonic acid (MSA)-treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer containing dimethylsulfoxide and Zonyl fluorosurfactant (designated as
As the elements of integrated circuits are downsized to the nanoscale, the current Cu-based interconnects are facing limitations due to increased resistivity and decreased current-carrying capacity because of scaling. Here, the bottom-up synthesis of single-crystalline WTe<sub>2</sub> nanobelts and low- and high-field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top-down approach, the bo
We report the novel role of graphene substrates in obstructing the aging propagation in both the basal planes and edges of two-dimensitional sheets of transition metal dichalcogenides (TMDs). Even after 300 d in ambient air conditions, the epitaxially grown WS2/graphene samples have a clean, uniform surface without any encapsulation. We show that high crystallinity is an effective factor that determines the excellent air stability of WS2/graphene, and we present impressive experimental evidence
The development of efficient adsorbents for the practical recovery of precious metals from electronic waste is vital to advanced energy/environment industries. Ti<sub>3</sub> C<sub>2</sub> T<sub>x</sub> MXene-based materials are promising adsorbents for aqueous environments; however, the highly defective and super hydrophilic nature of the MXene surface hinders its practical applications. Here, we report that nitrogen-doped MXene (N-MXene) nanosheet stacks, prepared via high-energy planetary bal
Two-dimensional (2D) transition metal nitride MXenes have been explored as promising alternatives to the widely used titanium carbide MXene for electronic and energy systems because of their unique electrochemical and catalytic properties. However, scalable production of nitride MXenes has been limited by the intrinsically weak transition metal nitride bonding, which significantly deteriorates the quality of crystals and transport pathways, affecting tunable electrochemical properties. This revi
Graphene has recently attracted particular interest as a flexible barrier film preventing permeation of gases and moistures. However, it has been proved to be exceptionally challenging to develop large-scale graphene films with little oxygen and moisture permeation suitable for industrial uses, mainly due to the presence of nanometer-sized defects of obscure origins. Here, the origins of water permeable routes on graphene-coated Cu foils are investigated by observing the micrometer-sized rusts i