Tae Geun Kim 교수

MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted considerable interest from both industry and academia because of its excellent electrical, mechanical, and chemical properties. However, MXene-based device engineering has rarely been reported. In this study, we explored Ti₃C₂ MXene for digital and analog computing applications by engineering the top electrode. For this purpose, Ti₃C₂ MXene was synthesized by a simple chemic

Although two-dimensional (2D) nanomaterials are promising candidates for use in memory and synaptic devices owing to their unique physical, chemical, and electrical properties, the process compatibility, synthetic reliability, and cost-effectiveness of 2D materials must be enhanced. In this context, amorphous boron nitride (a-BN) has emerged as a potential material for future 2D nanoelectronics. Therefore, we explored the use of a-BN for multilevel resistive switching (MRS) and synaptic learning

Abstract Hybrid systems have attracted significant attention within the scientific community due to their multifunctionality, which has resulted in increasing demands for wearable electronics, green energy, and miniaturization. Furthermore, MXenes are promising two‐dimensional materials that have been applied in various areas due to their unique properties. Herein, a flexible, transparent, and conductive electrode (FTCE) based on a multilayer hybrid MXene/Ag/MXene structure that can be applied t

Sneak path current generated by adjacent cells in three-dimensional (3D) memristor arrays must be curbed while securing the multi-bit storage capability of each cell to aid in the cost-effective increase in array size. For this purpose, a 3D stackable TaOx/HfO2-based selectorless memristor has been proposed and optimized via capacitance-dependent voltage division analysis. The proposed device utilizes the formation or rupture of conductive filaments for self-rectifying resistive switching operat

Functional neuronal computing systems that support information diversification require high-density memory with selector devices to reduce leakage current in cross-point architectures, which drives us to develop a functional switching layer that operates as three distinct devices, namely non-volatile memory, selector, and synaptic devices, using a GeTe-based single material system. In this study, amorphous Ag-GeTe switching layers are engineered by doping with Te species to achieve either resist

This paper presents an organic memristive device based on the soft and quasi-liquid trypsin biomaterial. Accordingly, trypsin is isolated from the bovine pancreas and deposited on a conducting fluorine-doped tin oxide (FTO) substrate. The current–voltage (I–V) measurements of the trypsin/FTO device show a hysteresis loop at multiple frequencies and voltages. The results demonstrate that the current and resistance of the device can be modulated by altering the frequency and magnitude of the appli

A UV light‐emitting diode (LED) is an eco‐friendly optical source with diverse applications. However, currently, the external quantum efficiency (EQE) of AlGaN‐based UV LEDs, particularly in the UV‐C band (<280 nm), is very low (<11%) mainly due to a large optical absorption via p ‐GaN contact layers. A direct Ohmic contact to p ‐AlGaN layers should be obtained using UV‐transparent conductive electrodes (TCEs) to solve this problem. A universal method is presented here to make such contact