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Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random-access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo-metal halide perovskite materials have demonstrated outstanding memory properties, such as a low-voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in develop

Recently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based on 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high-gain route toward photodetection in the form of single-photon detectors. Here, the authors report ultrasensitive avalanche phototransistors based on monolayer MoS₂ synthesized by chemical vapor deposition. A lower critical field for the electrical breakdown under il

Abstract Organic resistive memory devices are one of the promising next‐generation data storage technologies which can potentially enable low‐cost printable and flexible memory devices. Despite a substantial development of the field, the mechanism of the resistive switching phenomenon in organic resistive memory devices has not been clearly understood. Here, the time–dependent current behavior of unipolar organic resistive memory devices under a constant voltage stress to investigate the turn‐on

The development and characterization of high-performance nanocontacts to n-GaAs are reported. The nanocontacts can be made to both undoped and p-doped low-temperature-grown GaAs (LTG:GaAs) cap layers. The geometry of the nanocontact is well characterized and requires the deposition of a 4 nm single-crystalline Au cluster onto an ohmic contact structure which features a chemically stable LTG:GaAs surface layer prepared using an ex situ chemical self-assembly technique. A self-assembled monolayer

Abstract Organometal halide perovskites have emerged as potential material systems for resistive memory devices besides their outstanding optical and electrical properties. Although halide‐perovskite resistive memory has the advantage of operating with a low voltage and large on/off ratio, random distribution in operation voltage remains a challenge in memory application. This stochastic operation characteristic is due to the random formation of conducting filaments that cause resistance fluctua

Abstract Organic metal‐halide perovskites (OHPs) have recently attracted much attention as next‐generation semiconducting materials due to their outstanding opto‐electrical properties. However, OHPs currently suffer from the lack of efficient doping methods, while the traditional method of atomistic doping having clear limitations in the achievable doping range. While doping with molecular dopants, has been suggested as a solution to this problem, the action of these dopants is typically restric

Molecular electronics that can produce functional electronic circuits using a single molecule or molecular ensemble remains an attractive research field because it not only represents an essential step toward realizing ultimate electronic device scaling but may also expand our understanding of the intrinsic quantum transports at the molecular level. Recently, in order to overcome the difficulties inherent in the conventional approach to studying molecular electronics and developing functional de

Abstract Single‐source flash evaporation method has recently gained attention for its potential as a rapid and solvent‐free deposition method for producing organic–inorganic halide perovskite (OHP) films in large‐scale. However, due to a complex nature of the different experimental parameters involved in the deposition process, it is not straightforward to obtain the optimal condition for producing high‐quality OHP films. In this study, this problem is tackled by employing the design‐of‐experime

Abstract Organic materials and devices have attracted great attention for implementation of flexible and transparent electronics applications. However, further easy‐to‐manage organic devices with acceptable environmental reliability in open air are desirable. Specifically, because water‐based threats and particle contamination can degrade the functions of organic optoelectronics, introducing a superhydrophobic protection layer onto organic devices, which can eliminate issues via excellent water

We fabricated 8 × 8 arrays of non-volatile resistive memory devices on commercially available Scotch^® Magic^™ tape as a flexible substrate. The memory devices consist of double active layers of Al₂O₃ with a structure of Au/Al₂O₃/Au/Al₂O₃/Al (50 nm/20 nm/20 nm/20 nm/50 nm) on attachable tape substrates. Because the memory devices were fabricated using only dry and low temperature processes, the tape substrate d

We fabricated non-volatile resistive memory devices on a commercially available flexible paper substrate using physical vapor deposition methods in all of the fabrication steps. By using only evaporable component materials including aluminum oxide (Al2O3) and metal electrodes, it has become possible to constitute the vertical stacking Al2O3 active layer structure with metal electrodes in the memory devices without wet or crumpled damage on the paper substrate. The memory devices showed the typic

Organic resistive memory has been extensively investigated as a promising memory technology due to technical advantages such as its simple structure, low fabrication cost, and printing applicability as well as exceptional memory performances. In their Feature Article, on page 2806, Takhee Lee and co-workers focus in particular on important strategies to implement more practical memory applications in terms of performance, integration, and architectures.

Correction to: Advanced Optical Materials, https://doi.org/10.1002/adom.202200049, published: 15 April 2022 The original version of this Article contained errors. First, Figures 4a and 4b are mistakenly switched. The correct Figure 4 is following. Third, the E0 value of the BPT(biphenyl-4-thiol) molecule given in Table 1 and in the text of the manuscript are not consistent by a mistake. Correct Table 1 is following.