Kyoto University · 재료과학
이 교수의 연구실은 고효율 X선 검출기 및 광전소자 개발을 핵심으로 하며, 특히 메탈 할라이드 페로브스카이트와 산화구리 등 신소재를 활용한 스케일러블 박막 증착 기술을 연구하고 있습니다. 미스트 증착법을 중심으로 두꺼운 다결정 페로브스카이트 필름과 고성능 양자점 기반 소자를 대면적에서 안정적으로 제작하는 데에 초점을 맞추고 있으며, 이는 X선 영상, 태양전지, 자외선 센서 등 응용 분야로 이어지고 있습니다. 특히 열화상 및 방사선 감지에 적합한 고이동도, 고감도 소재의 설계와 공정 최적화가 핵심 연구 과제입니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Metal halide perovskites are promising for direct X-ray detection applications thanks to their high X-ray absorption capability and excellent charge carrier transport. Single-pixelated perovskite X-ray detectors have hitherto demonstrated excellent device performance, including high sensitivity and detectivity. On the other hand, multipixel flat-panel detectors (FPDs) that enable 2D X-ray imaging are undeveloped due to challenges in scalable deposition processes. In this perspective, we summariz
A high-mobility Cu₂O thin film was fabricated using the mist chemical vapor deposition (CVD) method. This was achieved by suppressing the contamination from nitrogen impurities and optimum growth conditions to obtain single-phase Cu₂O without CuO. A 600 nm Cu₂O thin film was obtained using ethylenediaminetetraacetic acid as a complexing agent in dry-air growth atmosphere for 120 min. The resulting thin film had a resistivity of 2.8 × 10² Ω ･ cm, carrier concentration of 1.2 × 10¹⁵ cm⁻³ and hole
The sensitivity of X-ray detectors can be effectively improved by forming a columnar grain structure in the photoconductive layer, given that few grain boundaries exist across the direction of electron–hole pair collection. Herein, we demonstrate the fabrication of Cs2AgBiBr6 films with columnar grain structures using the mist deposition method. An X-ray detector based on a 92 μm-thick Cs2AgBiBr6 film with columnar grains exhibits a high sensitivity of 487 μC Gyair–1 cm–2, which is the highest a
CsPbBr₃ is a promising candidate for highly sensitive flat-panel X-ray detectors due to its excellent optoelectronic properties. Thus, a method of preparing thick CsPbBr₃ films (>10 μm) over large areas (>10 × 10 cm²) is required. Herein, we report the fabrication of thick CsPbBr₃ films using a scalable mist deposition method. In this method, the film thickness was controlled and up-scaled by the number of deposition cycles. The obtained CsPbBr₃ films were composed of highly (101)-oriented colum
In this work, one-step coating of CsPbBr3 thin films using the mist deposition method is demonstrated. The CsPbBr3 layer is composed of large grains with an average size of approximately 1.4 μm, and it fully covers the substrate surface, unlike the layers prepared by conventional one-step spin-coating methods, so that efficient carrier transport is realized. Carbon-based CsPbBr3 perovskite solar cells (PSCs) fabricated using the mist deposition method exhibit a stabilized power conversion effici
Abstract A transparent conducting polymer, poly(3,4‐ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) thin films were fabricated by a novel ultrasonic spray‐assisted mist deposition technique. The films of ZnMgO and high conductive ZnO:Ga were also formed by the same technique, with which high performance PEDOT:PSS/ZnMgO Schottky ultraviolet sensors were fabricated on glass substrates. Hard‐mask patterning was employed, without photolithography. As an example, a sensor operating in the
P-type cuprous oxide (Cu2O) thin films were fabricated by an ultrasonic spray-assisted mist chemical vapor deposition (mist CVD) method. Copper(II) acetylacetonate was used as a precursor and deionized water was used as a solvent. Cu2O was grown at a temperature of 350 °C and the films were gradually changed from Cu2O to CuO by increasing the growth temperature. The Cu2O film grown at 350 °C showed p-type conductivity with a carrier concentration of 3.3 × 1015 cm−3 and a Hall mobility of 0.2 cm2
Abstract N‐type zinc oxide (ZnO) and p‐type cuprous oxide (Cu 2 O) thin films were fabricated by an ultrasonic spray‐assisted mist chemical vapor deposition (mist CVD) method. The films of transparent conductive gallium‐doped ZnO (ZnO:Ga) and indium tin oxide (ITO) were also formed by the same technique. ZnO thin films have showed n‐type conductivity with carrier concentration of 3.6 × 10 19 cm –3 and mobility of 8.6 cm 2 /V·s. Cu 2 O thin films showed p‐type conductivity whose carrier density a
Deep-ultraviolet light-emitting diodes (DUV-LEDs) have emerged as eco-friendly alternatives to mercury lamps for various applications. This study explores MgO–NiO–ZnO alloy semiconductors as potential materials for DUV-LEDs, offering advantages over conventional AlGaN-based systems. MgO–NiO–ZnO films with varying compositions were grown using mist chemical vapor deposition (mist-CVD) and characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX
A novel solution-based ultrasonic mist deposition method has been developed for the formation of organic solar cells. This technique enabled low-resistive gallium-doped zinc oxide (ZnO : Ga) and indium-tin-oxide (ITO) thin films capable of applying as anode layers in the device. Low resistive and flat PEDOS : PSS hole transport layer and P3HT : PCBM active layers were also deposited by this technique. The solar-cell devices with mist-deposited PEDOT : PSS or P3HT : PCBM layers showed higher shor
