전우진 교수

A reliable and rapid manufacturing process of molybdenum disulfide (MoS₂ ) with atomic-scale thicknesses remains a fundamental challenge toward its successful incorporation into high-performance nanoelectronics. It is imperative to achieve rapid and scalable production of MoS₂ exhibiting high carrier mobility and excellent on/off current ratios simultaneously. Herein, inhibitor-utilizing atomic layer deposition (iALD) is presented as a novel method to meet these requirement

nanolaminated thin films investigated for the application of dynamic random access memory (DRAM) capacitor dielectrics. is a promising high-k material, but its leakage current property is poor. nanolaminated film was inserted between two amorphous layers, and an thickness greater than effectively reduced the leakage current. When layers were crystallized to enhance the dielectric constant, a thicker sublayer was required. As a result, anatase-/rutile- nanolaminated film is suggested as an optima

Ginseng has shown an efficacy in preventing and managing various health conditions. This study aimed to evaluate the effect of the fermented ginseng extract (FGE) in type 2 diabetes mellitus murine model. FGE was provided to male C57BL/ksJ-db/db mice for 8 weeks at 0.1% (w/w) dose in contrast to water for the control group. Potential anti-diabetic mechanisms were investigated with blood glucose, serum insulin, serum adiponectin, hemoglobin A1c (HbA1c), glucose tolerance, insulin secretion assay,

The electrical characteristics of metal–insulator–metal (MIM) capacitors consisting of a ZrO 2 /Al 2 O 3 /ZrO 2 (ZAZ) dielectric film, a TiN bottom electrode (BE), and two different top electrodes (TEs; TiN and Ru) are examined. The enhanced property in the leakage current density versus equivalent oxide thickness ( J – t ox ) plot is observed in the MIM structure with the Ru TE for the ZAZ film with specific film thickness of ≈4.6 nm. Especially, the J due to the electron injection from the TiN

The effects of Pt and RuO2 top electrodes on the electrical properties of capacitors with Al-doped TiO2 (ATO) films grown on the RuO2 bottom electrode by an atomic layer deposition method were examined. The rutile phase ATO films with high bulk dielectric constant (>80) were well-grown because of the local epitaxial relationship with the rutile structured RuO2 bottom electrode. However, the interface between top electrode and ATO was damaged during the sputtering process of the top electrode, re

Metal-insulator-metal (MIM) diodes with ultrathin insulators are highly promising for a variety of applications, such as vertical integration technology. However, MIM diodes with thin enough structures have not been achieved in previous studies on diodes using Schottky emission or tunneling conduction asymmetry. In this paper, we demonstrate an MIM diode with an ultrathin, 5-nm TiN/ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -Al <sub

The role of Al dopant in rutile-phased TiO2 films in the evaluation of the mechanism of leakage current reduction in Al-doped TiO2 (ATO) was studied in detail. The leakage current of the ATO film was strongly affected by the Al concentration at the interface between the ATO film and the RuO2 electrode. The conduction band offset of the interface increased with the increase in the Al dopant concentration in the rutile TiO2, which reduced the leakage current in the voltage region pertinent to the

An atomic layer deposition (ALD) method for coating metastable MoO 2 thin films onto substrates was investigated. It is the first reported growth of metastable phased thin films based on chemical reaction-mediated thin film deposition processes, such as chemical vapor deposition or ALD.

Ruthenium thin films were grown through atomic layer deposition using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru [Rudense®] and oxygen at temperatures ranging from 250 °C to 270 °C and chamber pressures ranging from 0.5 Torr to 2.5 Torr.

Among the most fundamental challenges encountered in the successful incorporation of graphene in silicon-based electronics is the conformal growth of ultrathin dielectric films, especially those with thicknesses lower than 5 nm, on chemically inert graphene surfaces. Here, we present physisorbed-precursor-assisted atomic layer deposition (pALD) as an extremely robust method for fabricating such films. Using atomic-scale characterisation, it is confirmed that conformal and intact ultrathin Al2O3

A metal–insulator–metal (MIM) capacitor consisting of TiN and ZrO 2 /Al 2 O 3 /TiO 2 (ZAT) as electrodes and dielectric layer, respectively, is demonstrated for the development of next‐generation dynamic random access memory. The TiO 2 layer deposited on ZrO 2 –Al 2 O 3 exhibits a highly crystallized structure with an anatase phase and a dielectric constant of 40, resulting in a significant capacitance density enhancement compared with the conventional ZrO 2 /Al 2 O 3 /ZrO 2 (ZAZ) film. The leak