The University of Tokyo · 공학
Yongsheng Ren 교수의 연구실은 첨단 금속 소재, 특히 고엔트로피 합금(HEAs)과 고순도 실리콘의 제조 및 정제 기술에 중점을 두고 있습니다. 특히 알루미늄 합금의 고순도화 및 균질성 향상을 위한 용융 정련 기술, 실리콘에서 불화물과 같은 불순물을 효과적으로 제거하는 새로운 정제 메커니즘 개발이 핵심 연구 과제입니다. Zr를 이용한 B 제거 기술과 Czochralski 방식의 실리콘 웨이퍼에서 산소 농도를 저감하는 열처리 조건 최적화도 활발히 진행 중입니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
In recent years, high-entropy alloys (HEAs) have attracted tremendous attention in various fields. With multiple-principal elements and multiple core effects, giving them different organizational structures and unique properties compared with conventional alloys, providing unlimited development potential and bringing promising potential applications for HEAs. After almost 30 years of development, the preparation and research methods of HEAs have greatly expanded, the systems have been optimized,
Aluminum, the most produced non-ferrous metal in the world, is highly regarded for its light weight, high specific strength, and excellent thermal conductivity. With the continuous development of aerospace, precision electronics, photovoltaic semiconductors and other emerging strategic industries, the demand for high-performance aluminum alloys is also booming. The paper discusses recent advances in aluminum alloy melt purification, focusing on the development of conventional purification treatm
Aluminum is the world's largest production of non-ferrous metals, with light weight, high specific strength, excellent electrical and thermal conductivity and other characteristics. With the continuous development of aerospace, precision electronic instruments, photovoltaic semiconductors and other emerging strategic industries, the demand for high-performance materials of aluminum alloys has become increasingly strong. This paper reviews the research progress of aluminum alloy melt refinement t
A novel approach was put forward to remove B from Si by utilizing Zr as an additive during solidification, whereby, using the Si–Cu solvent, bulk Si with large area and low boron content was obtained. The premise of this work is based on the following parameters: (i) the lower liquidus temperature of the Si–Cu system; (ii) the notable density difference between solid Si and liquid Si–Cu; (iii) the low solubility of Cu in solid Si; and (iv) the strong affinity of Zr for B, enhancing boride format
Based on (i) the low liquidus temperature of Si–Cu systems, (ii) low solubility of Cu in solid Si, and (iii) a strong affinity of Zr to B for the enhanced boride formation, a novel method to remove B from Si using Zr as a trapping agent via a Si–Cu solvent was developed in this study. B-bearing polygonal ZrBx precipitations found at the bottom of test samples were confirmed as ZrB2 by electron probe microanalysis. Thermodynamic analysis revealed that the solubility products of ZrB2 in a Si–Cu me
• Heater radiant area affects crystal oxygen concentration and heater power . • Quartz crucible temperature controls crystal oxygen concentration. • Reducing heater height lowers crystal oxygen but raises power. • With the upgraded heater, power decreased by 1.07 kW and average head oxygen concentration decreased by 0.66 ppma. Oxygen is the major impurity in single-crystal silicon rod derived from the growth of large-diameter n-type Czochralski (Cz) silicon, which could exert severe affects on t