The University of Tokyo · 물리·천문학
Yukako Fujishiro 교수의 연구실은 토폴로지적 스핀 구조와 그가 생성하는 응집물리적 현상에 중점을 두고 있습니다. 특히 스핀 큐비트, 허치고-크리스탈, 스카이미온 등 비트리비얼 토폴로지 스핀 구조의 제어 및 전기적 응답을 연구하며, 초고압 및 고자기장 조건에서의 새로운 물질 상태를 탐구합니다. 이는 에너지 효율적인 스핀트로닉스 소자 및 기초 물리학적 현상 탐구에 기여합니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Manipulating topological spin textures is a key for exploring unprecedented emergent electromagnetic phenomena. Whereas switching control of magnetic skyrmions, e.g., the transitions between a skyrmion-lattice phase and conventional magnetic orders, is intensively studied towards development of future memory device concepts, transitions among spin textures with different topological orders remain largely unexplored. Here we develop a series of chiral magnets MnSi<sub>1-x</sub>Ge<sub>x</sub>, ser
The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall an
Spin structures with a non-trivial topology can emerge through the complex interplay of underlying magnetic interactions. Representative examples are magnetic skyrmions and hedgehogs observed in various materials. Although the most typical size of a skyrmion is 10–100 nm, there has been remarkable progress in the discovery of ultra-small (&lt;3 nm) skyrmions and hedgehogs in the last few years. The dense topological spin crystals not only hold promise for technological applications but also
The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall an
Transition metal monosilicides exhibit diverse physical properties depending on their crystal structures. Regarding IrSi, only the MnP-type orthorhombic form has been known so far. In this paper, the authors report a successful synthesis of a monoclinic phase through high-pressure high-temperature treatment above 25 GPa, while the theoretically predicted B20-type cubic structure has not been identified up to 48 GPa. Magneto-transport measurements reveal a semimetallic nature of the monoclinic fo
The authors reveal here anomalous charge transport upon melting of chiral spin orders, such as helical and skyrmion spin textures, in the itinerant chiral magnet FeGe. Under high pressure, significant modifications in the electronic structure induce a metal-to-semiconductor transition. Remarkably, a spontaneous anomalous Hall effect is observed in the short-range-ordered chiral spin ground state ($P$= 20--30 GPa) beyond the quantum phase transition. This macroscopic time-reversal symmetry breaki
Quantum states characterized by nontrivial topology produce interesting electrodynamics and versatile electronic functionalities. One source for such remarkable phenomena is emergent electromagnetic field, which is the outcome of interplay between topological spin structures with scalar spin chirality and conduction electrons. However, it has scarcely been exploited for emergent function related to heat-electricity conversion. Here we report an unusually enhanced thermopower by application of ma
A plethora of correlated and exotic metallic states have been identified on the border of itinerant magnetism, where the long-range spin texture is melted by tuning the magnetic transition temperature (T$_C$) towards zero, referred to as the quantum phase transition (QPT). So far, the study of QPT in itinerant magnets has mainly focused on low-T$_C$ materials (i.e., typically T$_C$ ~ 10 K) where the modification of electronic band structure is subtle, and only makes a small contribution to the Q