Geun Young Yeom
성균관대학교 재료과학공학과 · 공학
이 교수의 연구실은 나노소재 및 반도체 공정 기술 분야에서 활발한 연구를 수행하고 있습니다. 주요 연구 방향은 원자층 에칭(Atomic Layer Etching, ALE)을 활용한 정밀 두께 제어와, 그래핀, MoS₂, 텅스텐 등 다양한 2차원 물질 및 반도체 재료의 표면 및 전자적 특성 제어입니다. 특히, 에너지 변환 장치(예: 염료감응 태양전지)와 나노전자소자 응용을 위한 고성능 재료 개발에도 기여하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Dye-sensitized solar cell using counter electrode based on transition metal dichalcogenides.
The electronic and optical properties of graphene are greatly dependent on the the number of layers. For the precise control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and physical desorption, can be the most powerful technique due to barely no damage and no contamination. In this study, we demonstrated the ALE process of graphene layers without noticeably damaging the graphene by using a controlled low energy oxygen (O<sub>2<
In this study, a simple and controllable chlorine doping method of MoS<sub>2</sub> using a remote inductively coupled plasma (ICP) was studied and the effect of doping on the properties of MoS<sub>2</sub> was investigated by adjusting the work function of MoS<sub>2</sub>.
Abstract Atomic layer etching (ALE) has advantages such as precise thickness control, high etch selectivity, and no‐increase in surface roughness which can be applied to sub 10 nm semiconductor device fabrication. In this study, anisotropic ALE of tungsten (W), which is used as an interconnect layer and gate material of semiconductor devices, was investigated by sequentially exposing to F radicals by NF 3 plasma to form a WF y layer and following exposure to an oxygen ion beam to remove the WF y
