이재찬 교수

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film sy

A large FAS 2+ ion in FAPbI 3 scavenges localized electrons in defects, leading to perovskite solar cell module with remarkable performance values of 18.76% (25.74 cm 2 ) and 15.87% (65.22 cm 2 ), respectively.

Abstract A systematic study on the selective semihydrogenation of alkynes to alkenes on shape‐controlled palladium (Pd) nanocrystals was performed. Pd nanocrystals with a cubic shape and thus exposed {100} facets were synthesized in an aqueous solution through the reduction of Na 2 PdCl 4 with L ‐ascorbic acid in the presence of bromide ions. The Pd nanocubes were tested as catalysts for the semihydrogenation of various alkynes such as 5‐decyne, 2‐butyne‐1,4‐diol, and phenylacetylene. For all su

MgTiO 3 thin flms have been successfully grown on a sapphire crystal by the sol–gel process. Epitaxial growth of MgTiO 3 thin films was obtained using magnesium acetylacetonate and titanium isopropoxide in the sol–gel process. In nonhydrolytic conditions, the c -axis oriented ilmenite structure of MgTiO 3 thin films developed at the crystallization temperatures 650–800°C with a 3-fold axis symmetry in the c -plane. These epitaxial MgTiO 3 thin films had extremely fine features in morphology, i.e

Prediction of the flow stress of materials using a flow constitutive model provides strong support for engineering practice and promotes the continuous development of aluminum alloys and relevant application fields. Optimizing the parameters of flow constitutive models is a key concern to explain and predict the flow behavior. In this study, a genetic algorithm (GA) is used to optimize the parameters of flow constitutive models widely used for the flow behavior of Al alloy including modified Joh

Dielectric behavior on BaTiO3∕SrTiO3 artificial lattices has been investigated along with quantum mechanical simulation (first principles calculation). From the oxide artificial lattice approach, strain manipulation was performed to obtain a wide range of lattice deformation in the consisting BaTiO3 and SrTiO3 layers, which leads to two important consequences. First, we obtained enhanced dielectric constant and extremely large nonlinearity in the artificial lattices with very short stacking peri