Seung‐min Chung
연세대학교 공과대학 기계공학과 · 공학
이 교수의 연구실은 2차원 전이금속디 chalcogenide (TMD) 소재를 활용한 고감도·저전력 센서 및 전자소자에 초점을 맞추고 있습니다. 특히 원자층 두께의 반도체를 기반으로 한 센서 설계와 결함 선택적 기능화, 원자층증착(ALK)을 활용한 나노입자 도핑 기술을 통해 기존의 감도, 선택성, 복구성 문제를 해결하고자 합니다. 또한, 2차원 반도체와의 품질 높은 벤더발란스 접합을 통해 고성능 트랜지스터의 실현 가능성을 탐색하고 있습니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Two‐dimensional (2D) transition metal dichalcogenides (TMDs) have garnered significant attention in gas‐sensing applications due to their sensitive response to a wide range of gas molecules and their ability to operate at low temperatures, resulting in low‐power consumption. However, there are several areas that require improvement, including insufficient sensitivity at low detection limits, limited gas selectivity, low reliability, and poor recovery. To address these issues and enhance the perf
We introduce a new approach for the fabrication of an ultrasensitive nitrogen dioxide (NO2) gas sensor operating at room temperature. By using atomic layer deposition (ALD), Pt nanoparticles (NPs) can be selectively decorated on surface defects of tungsten disulfide (WS2). Our study demonstrated that defect-selectively functionalized gas sensors with Pt NPs only at high-surface-energy sites, such as dangling bonds and grain boundaries, exhibit a greater enhancement in sensitivity than nonselecti
Two-dimensional transition metal dichalcogenides (2D TMDCs) are considered promising alternatives to Si as channel materials because of the possibility of retaining their superior electronic transport properties even at atomic body thicknesses. However, the realization of high-performance 2D TMDC field-effect transistors remains a challenge owing to Fermi-level pinning (FLP) caused by gap states and the inherent high Schottky barrier height (SBH) within the metal contact and channel layer. This
