Young Jae Song
성균관대학교 신소재공학부 · 재료과학
Young Jae Song 교수의 연구실은 고해상도 전자기기 및 나노소재를 위한 고순도 이종구조(하이브리드) 페인팅 기반의 전자 소재 개발에 중점을 두고 있습니다. 특히 CVD를 활용한 그래핀과 hexagonal BN(h-BN)의 직접적 성장, 그리고 BGB(Boron Nitride-Graphene-Boron Nitride) 구조를 통한 기계적·화학적 안정성 향상 기술이 핵심 연구 분야입니다. 초저온 및 고자기장 환경에서의 스캐닝 프로브 마이크로스코피를 활용한 나노스케일 물성 분석도 함께 수행하고 있습니다. 이는 고성능 전자 소자 및 양자소재 연구를 위한 기초 기술을 제공합니다.
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication.
We describe the design, development and performance of a scanning probe microscopy (SPM) facility operating at a base temperature of 10 mK in magnetic fields up to 15 T. The microscope is cooled by a custom designed, fully ultra-high vacuum (UHV) compatible dilution refrigerator (DR) and is capable of in situ tip and sample exchange. Subpicometer stability at the tip-sample junction is achieved through three independent vibration isolation stages and careful design of the dilution refrigerator.
We describe the successful in situ chemical vapor deposition synthesis of a graphene-based heterostructure in which a graphene monolayer is protected by top and bottom boron nitride films. The boron nitride film/graphene monolayer/boron nitride film (BGB) was found to be a mechanically robust and chemically inert heterostructure, from which the deleterious effects of mechanical transfer processes and unwanted chemical doping under air exposure were eliminated. The chemical compositions of each f
The environmental stability of large-sized and single-crystalline antimony flakes was systematically investigated with temperature and time dependence at fixed humidity. The antimony flakes used in this work were grown by chemical vapor deposition (CVD) directly on SiO2 substrates, where antimonene layers were stacked to a few tens of nm thickness with a typical area of ∼40 μm.