Daewoong Kwon

Professor Daewoong Kwon's research lab specializes in next-generation semiconductor devices and neuromorphic computing, focusing on negative capacitance FETs and ferroelectric-based memory and logic devices. The lab pioneers the integration of hafnium zirconium oxide ferroelectrics into ultra-thin, high-performance transistors to achieve sub-thermionic switching and steep subthreshold swing, enabling energy-efficient electronics. A key research direction involves developing capacitive and ferroelectric synaptic devices for low-power neural network hardware, with applications in brain-inspired computing and edge AI. The lab also investigates device-level variability and reliability in ferroelectric tunnel junctions to advance scalable neuromorphic systems.