Sungkyunkwan University · 工学
Professor G.Y. Yeom's research lab specializes in plasma science and engineering, with a focus on fundamental plasma processes and their applications in semiconductor manufacturing. The lab investigates radio frequency (rf) and direct current (dc) plasma discharges, particularly magnetron and capacitive discharges, to understand electron confinement, self-bias formation, and plasma characteristics. Key research directions include plasma etching mechanisms, especially using fluorocarbon-based gases, and the optimization of inductively and capacitively coupled plasmas for high-precision etching of dielectric materials like SiO₂. The work bridges plasma physics with practical applications in microelectronics and thin-film processing.
Figures are computed from collected data and may differ slightly.
Direct current magnetron discharge sources are often characterized by current-voltage characteristics of the form I∝V n where n is typically in the range from 4 to 10. Similar I-V characteristics are found for dc hollow cathode discharges where the cathode configuration effectively provides electrostatic confinement of the primary electrons. Therefore, by analogy, it has been suggested that the exponent n provides an index to the effectiveness of the magnetic electron confinement in a magnetron
When a steady-state capacitive rf discharge is sustained between two electrodes whose surfaces in contact with the plasma have different areas, a negative dc self-bias usually develops on the smaller electrode. For ratios of electrode areas greater than about three, the self-bias is typically 80%–90% of the zero-to-peak potential of the applied rf voltage. However, in cylindrical-post magnetron discharges which are driven by rf power, the self-bias is often only 10%–20% of the zero-to-peak appli
The etching properties of C<sub>6</sub>F<sub>6</sub>/Ar/O<sub>2</sub> in both an inductively coupled plasma (ICP) system and a capacitively coupled plasma (CCP) system were evaluated to investigate the effects of high C/F ratio of perfluorocarbon (PFC) gas on the etch characteristics of SiO<sub>2</sub>. When the SiO<sub>2</sub> masked with ACL was etched with C<sub>6</sub>F<sub>6</sub>, for the CCP system, even though the etch selectivity was very high (20 ~ infinite), due to the heavy-ion bomba
In the present study, an attempt has been made to treat dairy wastewater entirely via anaerobic treatment over a period of 215 days, using two-stage Hybrid Upflow Anaerobic Sludge Blanket (HUASB) reactors, which offer the advantages associated both with fixed film and upflow sludge blanket treatments. A HUASB with polyurethane foam cubes was used for stage I, and a HUASB utilizing PVC-cut rings was used for stage II. The output from stage I was used as the input for stage II. The two-stage react
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