Tokyo Institute of Technology · Engineering
Hiroshi Funakubo 교수의 연구실은 페로일렉트릭성 산화알루미늄스칸디움질화합물(ScN)을 중심으로 한 새로운 반도체 페로일렉트릭 소재의 개발과 응용을 주요 연구 분야로 삼고 있습니다. 특히 두께가 극히 얇은 (Al1−xScx)N 페로일렉트릭 필름에서 높은 나선형 극화 및 높은 전도성 안정성을 확보하며, 나노스케일에서의 전기적 특성 제어에 성공했습니다. 이는 메모리 및 센서 소자 등 미래형 나노전자소자에 응용 가능한 핵심 기술로 평가되고 있습니다.
Figures are computed from collected data and may differ slightly.
The ferroelectricity of (Al1−xScx)N (x = 0–0.34) thin films with various thicknesses was investigated. (Al1−xScx)N films were prepared at 400 °C on (111)Pt/TiOx/SiO2/(001)Si substrates by the radio frequency dual-source reactive magnetron sputtering method using Al and Sc targets under pure N2 gas or a mixture of N2 and Ar gases. The film deposited under N2 gas showed larger remanent polarization than those under N2 + Ar mixture. Ferroelectricity was observed for films with x = 0.10–0.34 for abo
The temperature dependence of ferroelectric properties was investigated for (Al0.8Sc0.2)N films 9–130 nm thick prepared on (111)Pt/TiOx/SiO2/Si substrates. The coercive fields (Ec) of these films decreased with increasing measurement temperature up to 523 K, irrespective of film thickness, thus realizing polarization switching because the applicable maximum electric field is beyond Ec. As a resultant, remanent polarization (Pr) above 100 μC cm−2 was ascertained for 9 nm thick films at 373 and 42
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